Product Information

JDH2S02FSTPL3

JDH2S02FSTPL3 electronic component of Toshiba

Datasheet
Toshiba Schottky Diodes & Rectifiers High Freq Schottky 0.01A If 10V 0.3pF

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 10000
Multiples : 10000
10000 : USD 0.0537
30000 : USD 0.0484
50000 : USD 0.0465
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.3622
10 : USD 0.2578
100 : USD 0.146
500 : USD 0.0967
1000 : USD 0.0742
2000 : USD 0.0644
5000 : USD 0.058
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 0.3622
10 : USD 0.2578
100 : USD 0.146
500 : USD 0.0967
1000 : USD 0.0742
2000 : USD 0.0644
5000 : USD 0.058
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1
1 : USD 1.0278
10 : USD 0.7896
100 : USD 0.1792
500 : USD 0.1191
1000 : USD 0.0922
2500 : USD 0.0746
10000 : USD 0.0673
20000 : USD 0.0632
50000 : USD 0.059
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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JDH2S02FS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S02FS UHF Band Mixer Unit: mm Suitable for reducing set size through the use of a two-pin small package 0.60.05 supporting high-density mounting A 0.2 0.10.05 Absolute Maximum Ratings 0.05 (Ta = 25C) 0.07 M A Characteristic Symbol Rating Unit +0.02 0.48 -0.03 Maximum (peak) reverse voltage V 10 V R Forward current I 10 mA F Junction temperature T 125 C j Storage temperature range T -55 to 125 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 1-1L1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 0.0006 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.24 V F F Forward current I V = 0.5 V 2 mA F F Reverse current I V = 0.5 V 25 A R R Capacitance C V = 0.2 V, f = 1 MHz 0.3 pF T R Note: Signal level when capacitance is measured: Vsig = 20 mV rms Marking Caution This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with the product should be made of antistatic materials. Start of commercial production 2004-09 2005-2017 1 2017-08-03 Toshiba Electronic Devices & Storage Corporation T 0.1 0.80.05 0.1 1.00.05JDH2S02FS IF-VF 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF(V) IR-VR 1.E+00 C 1.E-01 1.E-02 IR(A) 1.E-03 1.E-04 1.E-05 1.E-06 1.E-07 0 2 4 6 8 10 12 14 16 VR(V) 2005-2017 2 2017-08-03 Toshiba Electronic Devices & Storage Corporation IF(A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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