Product Information

JDH2S01FSTPL3

JDH2S01FSTPL3 electronic component of Toshiba

Datasheet
Toshiba Schottky Diodes & Rectifiers High Freq Schottky 0.03A 5V VRM 0.6pF

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.882
10 : USD 0.6427
100 : USD 0.364
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.616
10 : USD 0.4732
100 : USD 0.2115
500 : USD 0.1406
1000 : USD 0.1088
2500 : USD 0.088
10000 : USD 0.0764
20000 : USD 0.0717
50000 : USD 0.067
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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JDH2S01FS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S01FS UHF Band Mixer Unit: mm Suitable for reducing set size through the use of a two-pin small package 0.60.05 supporting high-density mounting A Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 0.2 0.10.05 0.05 0.07 M A Maximum (peak) reverse voltage V 4 V R Forward current I 25 mA F +0.02 0.48 -0.03 Junction temperature T 125 C j Storage temperature range T -55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. JEITA operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 1-1L1A Please design the appropriate reliability upon reviewing the Weight: 0.0006 g (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 2 mA 0.25 V F F Forward current I V = 0.5 V 25 mA F F Reverse current I V = 0.5 V 25 A R R Capacitance C V = 0.2 V, f = 1 MHz 0.6 pF T R Note: Signal level when capacitance is measured: V = 20 mV sig rms Marking Z Caution This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with the product should be made of antistatic materials. Start of commercial production 2004-10 2005-2017 1 2017-08-03 Toshiba Electronic Devices & Storage Corporation 0.1 0.80.05 0.1 1.00.05JDH2S01FS - VF 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF( V) -VR 1.E+00 1.E-01 C 1.E-02 1.E-03 I R (A) 1.E-04 1.E-05 1.E-06 1.E-07 0 1 2 3 4 5 6 VR (V) 2005-2017 2 2017-08-03 Toshiba Electronic Devices & Storage Corporation IF( A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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