Product Information

DF2S16CT,L3F

DF2S16CT,L3F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD PROTECTION DIODE Uni-Directional
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.567 ea
Line Total: USD 0.57

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1

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DF2S16CT,L3F
Toshiba

1 : USD 0.567
10 : USD 0.4961
100 : USD 0.0889
1000 : USD 0.0442
2500 : USD 0.0397
10000 : USD 0.0318
20000 : USD 0.0284
50000 : USD 0.0249
100000 : USD 0.0204

Read More Specifications

     
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RoHS - XON
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Additional Infomation About Product

DF2S16CT ESD Protection Diodes Silicon Epitaxial Planar DF2S16CTDF2S16CTDF2S16CTDF2S16CT 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25))) a aaa Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V 12 kV ESD Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-07 2014-04-14 1 Rev.4.0DF2S16CT 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa V : Working peak reverse RWM voltage V : Reverse breakdown voltage BR I : Reverse breakdown current BR I : Reverse current R V : Clamp voltage C I : Peak pulse current PP R : Dynamic resistance DYN Fig. Fig. Fig. Fig. 4.14.14.14.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 15.3 17.1 V Z Z Dynamic impedance Z I = 5 mA 35 Z Z Reverse current I V = 12 V 0.5 A R R Total capacitance C V = 0 V, f = 1 MHz 10 pF t R 5. 5. Guaranteed ESD Protection (Note)Guaranteed ESD Protection (Note) 5. 5. Guaranteed ESD Protection (Note)Guaranteed ESD Protection (Note) Test Condition ESD Protection IEC61000-4-2 (Contact discharge) 12 kV Note: Criterion: No damage to devices. 2014-04-14 2 Rev.4.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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