Product Information

CMF02(TE12L,Q,M)

CMF02(TE12L,Q,M) electronic component of Toshiba

Datasheet
Toshiba Rectifiers Diode S-FRD 600V, 1A

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1301 ea
Line Total: USD 390.3

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1301
9000 : USD 0.1186
24000 : USD 0.1123
45000 : USD 0.111

0 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.4912
10 : USD 0.3785
100 : USD 0.2302
500 : USD 0.2136
1000 : USD 0.159
3000 : USD 0.1376
9000 : USD 0.1281
24000 : USD 0.1281
45000 : USD 0.1234

0 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 137
Multiples : 137
137 : USD 0.1536
200 : USD 0.1123

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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CMF02 TOSHIBA Fast Recovery Diode Silicon Diffused Type CMF02 Switching Mode Power Supply Applications DC/DC Converter Applications Unit: mm Repetitive peak reverse voltage : V = 600 V RRM Average forward current : I = 1 A F (AV) Peak forward voltage : V = 2 V (max) FM Very fast reverse-recovery time : t = 100 ns (max) rr Suitable for high-density board assembly due to the use of a small TM Toshiba Nickname: M FLAT Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Repetitive peak reverse voltage V 600 V RRM Average forward current I 1 (Note 1) A F (AV) Non-repetitive peak forward surge current I 10 (50 Hz) A FSM Junction temperature T 40 to 150 C j Storage temperature range T 40 to 150 C stg Note 1: T = 108C Rectangular waveform ( = 180) Note 2: Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 3-4E1S absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.023 g (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Peak forward voltage V I = 1 A (pulse test) 2 V FM FM Repetitive peak reverse current I V = 600 V (pulse test) 50 A RRM RRM Reverse recovery time t I = 1 A, di/dt = -30 A/s 100 ns rr F Forward recovery time t I = 1 A 270 ns fr F Device mounted on a ceramic board board size: 50 mm 50 mm 60 soldering land: 2 mm 2 mm board thickness: 0.64mm Device mounted on a glass-epoxy board board size: 50 mm 50 mm Thermal resistance R 135 C/W th (j-a) soldering land: 6 mm 6 mm board thickness: 1.6mm Device mounted on a glass-epoxy board board size: 50 mm 50 mm 210 soldering land: 2.1 mm 1.4 mm board thickness: 1.6mm Thermal resistance (junction to lead) R 16 C/W th (j-) Start of commercial production 2006-07 1 2018-06-07 CMF02 Marking Abbreviation Code Part No. F2 CMF02 Land pattern dimensions for reference only Unit: mm 1.4 3.0 1.4 Handling Precaution 1) The absolute maximum ratings denote the absolute maximum ratings, which are rated values that must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for when designing a circuit incorporating this device. V : We recommend that the worst case voltage, including surge voltage, be no greater 80tha% n of the RRM absolute maximum rating of V for a DC circuit and no greater than 50% of that of V for an AC RRM RRM circuit. V has a temperature coefficient of 0.1%/. Take this temperature account coefficient into when RRM designing a device for operation at low temperatures. I : We recommend that the wors-ctase current be no greater than 80% of the absolute maximum rating of F(AV) I and that the worst-case junction temperature, T, be kept below 120. When using this device, allow F(AV) j margins, referring to the T - I curve. a(max) F(AV) I : This rating specifies peak non-repetitive forward surge current. This only applies to an abnormal operation, FSM which seldom occurs during the lifespan of a device. T : Derate device parameters in proportion to this rating in order to ensure high reliability. j We recommend that the junction temperature (T ) of a device be kept below 120 . j 2) Thermal resistance (junction-to-ambient) varies with the mounting conditions of a device on a circuit board. An appropriate thermal resistance value should be used, considering the heat sink, circuit board design and soldering land size. 3) For other design considerations, see the Rectifiers databook or the Toshiba website. 2 2018-06-07 2.1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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