Product Information

CMG02(TE12L,Q,M)

CMG02(TE12L,Q,M) electronic component of Toshiba

Datasheet
Toshiba Rectifiers 400V Vrrm 2.0 IF 80A IFSM Rectifier

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5793 ea
Line Total: USD 1.58

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 1.5793
10 : USD 0.7518
100 : USD 0.4091
500 : USD 0.321
1000 : USD 0.2485
3000 : USD 0.2258
6000 : USD 0.2112
9000 : USD 0.1916
24000 : USD 0.1853

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 36
Multiples : 36
36 : USD 0.679
50 : USD 0.3183
100 : USD 0.2902
200 : USD 0.2826
500 : USD 0.2499

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
If - Forward Current
Type
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Product
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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CMG02 TOSHIBA Rectifier Silicon Diffused Type CMG02 Unit: mm General-Purpose Rectifier Applications Repetitive peak reverse voltage : V = 400 V RRM Average forward current : I = 2.0 A F (AV) Suitable for high-density board assembly due to the use of a small TM Toshiba Nickname: M FLAT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 400 V RRM Average forward current I 2.0 A F (AV) Non-repetitive peak forward surge current I 80 (50 Hz) A FSM Junction temperature T 40 to 150 C j Storage temperature T 40 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 3-4E1S temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.023 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I =1.0 A (pulse test) 0.86 V FM(1) FM Peak forward voltage V I = 2.0 A (pulse test) 0.9 1.1 V FM(2) FM Repetitive peak reverse current I V = 400 V (pulse test) 10 A RRM RRM Device mounted on a ceramic board board size 50 mm 50 mm 60 soldering land size 2 mm 2 mm board thickness 0.64 mm Device mounted on a glass-epoxy board Thermal resistance board size 50 mm 50 mm R 110 C/W th (j-a) (junction to ambient) soldering land size 6 mm 6 mm board thickness 1.6 mm Device mounted on a glass-epoxy board board size 50 mm 50 mm 180 soldering land size 2.1 mm 1.4 mm board thickness 1.6 mm Thermal resistance R 16 C/W th (j-) (junction to lead) Start of commercial production 2002-11 1 2018-08-03 CMG02 Marking Abbreviation Code Part No. G2 CMG02 Land pattern dimensions for reference only Unit: mm 1.4 3.0 1.4 Handling Precaution 1) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must n ot be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. V : We recommend that the worst case voltage, including surge voltage, be no greater than 80% ofhe t absolute RRM maximum rating of V for a DC circuit and be no greater than 50% of that of V for an AC circuit. RRM RRM V has a temperature coefficient of 0.1%/C. Take this temperature coefficient into account designing a RRM device at low temperature. I :We recommend that the worst case current be no greater than 80% of the absolute maximum rating of I F (AV) F (AV) and T be below 120C. When using this device, take the margin into consideration by using an allowable Ta j max-I curve. F (AV) IFSM: This rating specifies the non-repetitive peak current in one cycle of a 50-Hz sine wave, condition angle 180. Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespanthe of device. Tj : We recommend that a device be used at Tj below 120C under the worst load and heat radiation conditions. 2) Thermal resistance between junction and ambient fluctuates depending on the devisc em ounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 3) For other design considerations, see the Toshiba website. 2 2018-08-03 2.1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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