CBS05F30 Schottky Barrier Diode Silicon Epitaxial CBS05F30CBS05F30CBS05F30CBS05F30 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low forward voltage: V = 0.38 V (typ.) F(3) (2) Thin and compact packaging: Height = 0.40mm(max) 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode CST2B 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25))) Characteristics Symbol Note Rating Unit Reverse voltage V 30 V R Average rectified current I (Note 1) 500 mA O Non-repetitive peak forward surge current I (Note 2) 3 A FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass-epoxy circuit board of 20 mm 20 mm, Pad dimension of 4 mm 4 mm. Note 2: Measured with a 10 ms pulse. Start of commercial production 2010-12 2018 2018-11-16 1 Toshiba Electronic Devices & Storage Corporation Rev.6.0CBS05F30 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, Ta = 25Electrical Characteristics (Unless otherwise specified, Ta = 25Electrical Characteristics (Unless otherwise specified, Ta = 25Electrical Characteristics (Unless otherwise specified, Ta = 25)))) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 0.23 V F(1) F V I = 100 mA 0.31 F(2) F V I = 500 mA 0.38 0.45 F(3) F Reverse current I V = 30 V 5 50 A R R Total capacitance C V = 0 V, f = 1 MHz 118 pF t R 6. 6. MarkingMarking 6. 6. MarkingMarking Fig. 6.1 Marking Fig. Fig. Fig. 6.16.16.1 MarkingMarkingMarking Marking Code Part Number 72 CBS05F30 7. 7. 7. 7. Usage ConsiderationsUsage ConsiderationsUsage ConsiderationsUsage Considerations Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 8. 8. Land pattern dimensions for reference onlyLand pattern dimensions for reference only 8. 8. Land pattern dimensions for reference onlyLand pattern dimensions for reference only Fig. Fig. Fig. Fig. 8.18.18.18.1 Land pattern dimensions for reference only (Unit: mm)Land pattern dimensions for reference only (Unit: mm)Land pattern dimensions for reference only (Unit: mm)Land pattern dimensions for reference only (Unit: mm) 2018 2018-11-16 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0