Product Information

GB02SLT12-214

GB02SLT12-214 electronic component of GeneSiC Semiconductor

Datasheet
Schottky Diodes & Rectifiers 1200V 5A Standard

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.807 ea
Line Total: USD 3.807

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 3000
Multiples : 3000

Stock Image

GB02SLT12-214
GeneSiC Semiconductor

3000 : USD 2.4263

0 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

Stock Image

GB02SLT12-214
GeneSiC Semiconductor

1 : USD 3.243
10 : USD 2.9555
25 : USD 2.8175
100 : USD 2.6565
250 : USD 2.576
500 : USD 2.4955
1000 : USD 2.392
3000 : USD 2.392

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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TM GB02SLT12-214 1200V 2A SiC Schottky MPS Diode Silicon Carbide Schottky Diode VRRM = 1200 V F (T 150C) I L = 2 A QC = 11 nC Features Package Low V for High Temperature Operaon ti F K Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F RoHS Low Thermal Resistance Low Reverse Leakage Current Temperature Independent Fast Switching Posivti e Temperature Coe cient of V F A DO-214 REACH High dV/dt Ruggedness Advantages Applications Improved System E ciency High Voltage Sensing High System Reliability Solar Inverters Opmal Pti rice Performance Electric Vehicles Reduced Cooling Requirements High Frequency Converters Increased System Power Density Baerytt Chargers Zero Reverse Recovery Current AC/DC Power Supplies Easy to Parallel without Thermal Runaway Anti-P arallel / Free-Wheeling Diode Enables Extremely Fast Switching LED and HID Lighng ti Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) L Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM Continuous Forward Current IF TL 150C 2 A T = 25C, t = 10 ms 20 Non-Repetitive Peak Forward Surge Current, Half Sine L P IF,SM A Wave T = 150C, t = 10 ms 16 L P TL = 25C, tP = 10 ms 12 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TL = 150C, tP = 10 ms 9 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 100 A F,MAX L P 2 2 2 i t Value i dt T = 25C, t = 10 ms 2 A s L P Non-Repetitive Avalanche Energy EAS L = 18.0 mH, IAS = 2 A 36 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 84 W Fig. 3 TOT L Operating and Storage Temperature Tj , Tstg -55 to 175 C Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GB02SLT12-214/GB02SLT12-214.pdf Page 1 of 6TM GB02SLT12-214 1200V 2A SiC Schottky MPS Diode Electrical Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 2 A, T = 25C 1.5 1.8 F j Diode Forward Voltage VF V Fig. 1 I = 2 A, T = 175C 1.9 F j V = 1200 V, T = 25C 1 5 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 3 R j VR = 400 V 7 Total Capacitive Charge Q nC Fig. 5 C V = 800 V 11 R IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 122 Total Capacitance C pF Fig. 4 VR = 800 V, f = 1MHz 7 Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Lead R 5.17 C/W thJL Weight W 0.3 g T Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GB02SLT12-214/GB02SLT12-214.pdf Page 2 of 6

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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