Product Information

2SK3878(F)

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Datasheet

MOSFET
Power MOSFET with 600V, 80A, 45m?. Suitable for high-side switching applications.
Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.6267 ea
Line Total: USD 3.63

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 1 Multiples : 1 2SK3878(F) Toshiba	1 : USD 3.7847 10 : USD 3.0221 100 : USD 2.4079 500 : USD 2.1184 1000 : USD 1.8349

0 - WHS 2 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 1 Multiples : 1 2SK3878(F) Toshiba	1 : USD 3.6267 10 : USD 3.0041 25 : USD 2.636 50 : USD 2.467 100 : USD 2.1387 250 : USD 1.8005

0 - WHS 3 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 1 Multiples : 1 2SK3878(F) Toshiba	1 : USD 6.8508 3 : USD 2.9391 17 : USD 1.884

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Additional Infomation About Product

The 2SK3878(F) part is a low on-resistance, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Toshiba. This device is typically used as a power switch in telecommunication and computer equipment, such as mobile phones and laptop computers. It has a continuous drain current of 9.0A and an on-resistance of 30mO at VGS = 8V. It features a maximum gate-source voltage rating of +-20V, a maximum drain-source voltage of 30V and an Avalanche energy rating of 68mJ. The 2SK3878(F) is a small-size package, measuring just 4.5 x 4.5mm, with built-in ESD protection and 100% ON-chip testable reliability.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Transistor Polarity N Channel N Channel
Brand Toshiba Toshiba
Continuous Drain Current Id 9 A 9 A
Drain Source Voltage Vds 900 V 900 V
On Resistance Rdson 1.3 Ohms 1.3 Ohms
Rdson Test Voltage Vgs 10 V 10 V
Threshold Voltage Vgs 4 V 4 V
Power Dissipation Pd 150 W 150 W
Transistor Case Style TO - 3P TO - 3P
No. Of Pins 3Pins 3Pins
Operating Temperature Max 150 C 150 C
Svhc No SVHC (15 - Jan - 2018) No SVHC (15 - Jan - 2018)
Current Id Max 9 A 9 A
Termination Type Through Hole Through Hole
Transistor Type Power MOSFET Power MOSFET
Voltage Vds Typ 900 V 900 V
Voltage Vgs Max 30 V 30 V
Voltage Vgs Rds On Measurement 10 V 10 V