Product Information

2SK880-BL(TE85L,F)

2SK880-BL(TE85L,F) electronic component of Toshiba

Datasheet
JFET N-CH FET 1.0dB AMP AUDIO -50 VGDS 10mA

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

163: USD 0.2406 ea
Line Total: USD 39.22

2910 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 163  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 163
Multiples : 1
163 : USD 0.2356
200 : USD 0.234
500 : USD 0.2308
1000 : USD 0.226

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Series
Drain Source Voltage Vds
Brand
Continuous Drain Current
Drain-Source Current At Vgs 0
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Power Dissipation
Input Capacitance
Maximum Drain Gate Voltage
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit: mm High Y : Y = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = 50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = 1 nA (max) at V = 30 V GSS GS Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 100 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA SC-70 Please design the appropriate reliability upon reviewing the TOSHIBA 2-2E1B Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual Weight: 0.006 g (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 1.2 14.0 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.2 1.5 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 4.0 15 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 13 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 3 pF rss DG D V = 10 V, R = 1 k DS G NF (1) 5 I = 0.5 mA, f = 10 Hz D Noise figure dB V = 10 V, R = 1 k DS G NF (2) 1 I = 0.5 mA, f = 1 kHz D Note: I classification Y: 1.2 to 3.0 mA, GR: 2.6 to 6.5 mA, BL: 6.0 to 14 mA DSS Marking Start of commercial production 1987-05 1 2014-03-01 2SK880 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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