Product Information

2SK209-Y(TE85L,F)

2SK209-Y(TE85L,F) electronic component of Toshiba

Datasheet
Toshiba JFET N-Ch Junction FET 10mA -50V VGDS

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2257 ea
Line Total: USD 1.13

5824 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
5824 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5
5 : USD 0.2257
50 : USD 0.1799
150 : USD 0.1605
500 : USD 0.1361
3000 : USD 0.1251
6000 : USD 0.1187

2910 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 149
Multiples : 1
149 : USD 0.257
200 : USD 0.2555
500 : USD 0.2156
1000 : USD 0.205
2000 : USD 0.2023

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Series
Brand
Gate-Source Cutoff Voltage
Maximum Drain Gate Voltage
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
2SK2145-BL(TE85L,F electronic component of Toshiba 2SK2145-BL(TE85L,F

JFET N-Ch Junction FET 10mA -50V VGDS
Stock : 0

2SK2145-Y(TE85L,F) electronic component of Toshiba 2SK2145-Y(TE85L,F)

JFET Junction FET N-Ch x2 1.2 to 14mA 10mA
Stock : 0

2SK2231(TE16R1,NQ) electronic component of Toshiba 2SK2231(TE16R1,NQ)

N-Channel 60 V 5A (Ta) 20W (Tc) Surface Mount PW-MOLD
Stock : 0

2SK2145-GR(TE85L,F electronic component of Toshiba 2SK2145-GR(TE85L,F

JFET Junction FET N-Ch x2 1.2 to 14mA 10mA
Stock : 0

2SK2267(Q) electronic component of Toshiba 2SK2267(Q)

Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3PL
Stock : 197

2SK2545(Q,T) electronic component of Toshiba 2SK2545(Q,T)

MOSFETS N-CH 600V 6A 0.9 OHM ELECTRONICS PART
Stock : 0

2SK2613(F) electronic component of Toshiba 2SK2613(F)

Trans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-3PN
Stock : 0

2SK2614(TE16L1,Q) electronic component of Toshiba 2SK2614(TE16L1,Q)

MOSFET DP PLN,ACTIVE,DISCON(09-10)PHASE-OUT(11-01)OBSOLETE(11-04),
Stock : 1069

2SK2399(TE16L1,NQ) electronic component of Toshiba 2SK2399(TE16L1,NQ)

Transistor: N-MOSFET; unipolar; 100V; 5A; 20W; DPAK
Stock : 0

2SK2231(TE16L1,NQ) electronic component of Toshiba 2SK2231(TE16L1,NQ)

Transistor: N-MOSFET; unipolar; 60V; 5A; 20W; DPAK
Stock : 0

Image Description
2SK2145-BL(TE85L,F electronic component of Toshiba 2SK2145-BL(TE85L,F

JFET N-Ch Junction FET 10mA -50V VGDS
Stock : 0

2SK2145-Y(TE85L,F) electronic component of Toshiba 2SK2145-Y(TE85L,F)

JFET Junction FET N-Ch x2 1.2 to 14mA 10mA
Stock : 0

2SK536-TB-E electronic component of ON Semiconductor 2SK536-TB-E

JFET N-Channel MOSFET 50V, 100mA, Single CP
Stock : 0

2SK596S-C electronic component of ON Semiconductor 2SK596S-C

Trans JFET N-CH 1mA 3-Pin SPA Bag
Stock : 0

2SK879-Y(TE85L,F) electronic component of Toshiba 2SK879-Y(TE85L,F)

JFET Junction FET N-Ch 0.3 to 6.5mA 10mA
Stock : 4047

SMMBF4393LT1G electronic component of ON Semiconductor SMMBF4393LT1G

JFET N-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)
Stock : 0

SMMBFJ310LT3G electronic component of ON Semiconductor SMMBFJ310LT3G

ON Semiconductor JFET SS JFET XSTR SPCL
Stock : 29700

SST204-E3 electronic component of Vishay SST204-E3

JFET RECOMMENDED ALT 781-SST204
Stock : 0

SST4416-E3 electronic component of Vishay SST4416-E3

JFET RECOMMENDED ALT 781-SST4416-T1-E3
Stock : 0

GA05JT01-46 electronic component of GeneSiC Semiconductor GA05JT01-46

GeneSiC Semiconductor JFET SiC High Temperature JT
Stock : 0

2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm High Y : Y = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = 50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = 1 nA (max) at V = 30 V GSS GS Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 150 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC TO-236 reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA SC-59 absolute maximum ratings. TOSHIBA 2-3F1B Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.012 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 1.2 14.0 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.2 1.5 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 4.0 15 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 13 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 3 pF rss DG D V = 10 V, R = 1 k DS G Noise figure NF (1) 5 dB I = 0.5 mA, f = 10 Hz D V = 10 V, R = 1 k DS G Noise figure NF (2) 1 dB I = 0.5 mA, f = 1 kHz D Note: I classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA DSS Marking Start of commercial production 1981-06 1 2014-03-01 2SK209 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted