Product Information

2SC6026MFV-Y,L3F

2SC6026MFV-Y,L3F electronic component of Toshiba

Datasheet
Bipolar Transistors - BJT NPN Transistor, VCEO=50V, IC=0.15A, hFE=120 to 240 in SOT-723 (VESM) package
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8000: USD 0.0199 ea
Line Total: USD 159.2

0 - Global Stock
MOQ: 8000  Multiples: 8000
Pack Size: 8000

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Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 8000
Multiples : 8000
8000 : USD 0.0662
16000 : USD 0.0555
24000 : USD 0.05
56000 : USD 0.0444
200000 : USD 0.0392

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Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.4207
10 : USD 0.3651
100 : USD 0.1984
500 : USD 0.1222
1000 : USD 0.0833
2000 : USD 0.0707

0 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.4207
10 : USD 0.3651
100 : USD 0.1984
500 : USD 0.1222
1000 : USD 0.0833
2000 : USD 0.0707

0 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 8000
Multiples : 8000
8000 : USD 0.0226

0 - WHS 5


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.4347
10 : USD 0.4131
100 : USD 0.0945
500 : USD 0.0561
1000 : USD 0.0335
2500 : USD 0.0302
8000 : USD 0.0259
24000 : USD 0.0227
48000 : USD 0.0216

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Additional Infomation About Product

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm 1.2 0.05 High voltage and high current : V = 50 V, I = 150 mA (max) 0.80 0.05 CEO C Excellent h linearity : FE h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE C FE C 1 High h h = 120 to 400 1 FE : FE Complementary to 2SA2154MFV 3 2 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 60 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V 1.BASE EBO 2.EMITTER Collector current I 150 mA VESM C 3.COLLECTOR Base current I 30 mA B Collector power dissipation P 150* mW C JEDEC Junction temperature T 150 C j JEITA Storage temperature range T 55 to 150 C stg TOSHIBA 2-1L1A Note: Using continuously under heavy loads (e.g. the application of Weight: 1.5 mg (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Mounted on FR4 board (25.4 mm 25.4 mm 1.6mmt) Mount Pad Dimensions (Reference) 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Unit: mm Start of commercial production 2005-02 1 2014-03-01 1.2 0.05 0.8 0.05 0.5 0.05 0.4 0.4 0.22 0.05 0.13 0.05 0.32 0.052SC6026MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current I V = 60 V, I = 0 0.1 A CBO CB E Emitter cutoff current I V = 5 V, I = 0 0.1 A EBO EB C DC current gain h (Note) V = 6 V, I = 2 mA 120 400 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.15 0.25 V CE (sat) C B Transition frequency f V = 10 V, I = 1 mA 60 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 0.95 3 pF ob CB E Note: h classification Y (Y): 120 to 240, GR (G): 200 to 400 FE ( ) marking symbol Marking Type Name h Classification FE HY 2 2014-03-01

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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