Product Information

1SS379TE85LF

1SS379TE85LF electronic component of Toshiba

Datasheet
Diodes - General Purpose, Power, Switching VF 1.0V IR 0.1nA CT CT 3.0pF 85 Vrm
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2074 ea
Line Total: USD 1.04

13977 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
13526 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

1SS379TE85LF
Toshiba

5 : USD 0.1683
50 : USD 0.1351
150 : USD 0.1208
500 : USD 0.1032
3000 : USD 0.0887
6000 : USD 0.084

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

1SS379 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications Unit: mm AEC-Q101 Qualified (Note1) Small package : SC-59 Low forward voltage : V = 1.0 V (typ.) F Low reverse current : I = 0.1 nA (typ.) R Small total capacitance : C = 3.0 pF (typ.) T Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V V RM 85 Reverse voltage V V R 80 Maximum (peak) forward current I mA FM 300 * Average forward current I mA O 100 * Surge current (10ms) I A FSM 2 * JEDEC TO-236MOD PD (Note 2, 4) 200 JEITA SC-59 Power dissipation mW TOSHIBA 2-3F1S P (Note 3) 150 D Weight: 12 mg (typ.) T (Note 2) 150 j Junction temperature C T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) *: Unit rating. Total rating = Unit rating 0.7. Start of commercial production 1994-01 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS379 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V I = 100 mA 1.0 1.3 V F F Reverse current I V = 80 V 0.1 10 R R nA Total capacitance C V = 0 V, f = 1 MH 3.0 6.0 pF T R z Equivalent Circuit (Top View) Marking 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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