Product Information

1SS382TE85LF

1SS382TE85LF electronic component of Toshiba

Datasheet
Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4473 ea
Line Total: USD 0.45

9241 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
9241 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

1SS382TE85LF
Toshiba

1 : USD 0.4473
10 : USD 0.3151
100 : USD 0.1299
1000 : USD 0.1
3000 : USD 0.0816
9000 : USD 0.0725
24000 : USD 0.0713
45000 : USD 0.0644
99000 : USD 0.0632

17987 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 195
Multiples : 1

Stock Image

1SS382TE85LF
Toshiba

195 : USD 0.5037
250 : USD 0.4889
500 : USD 0.4757
1000 : USD 0.4641
2500 : USD 0.4548

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Unit: mm Ultra High Speed Switching Application Small package Composed of 2 independent diodes. Low forward voltage : V = 0.92 V (typ.) F (3) Fast reverse recovery time : t = 1.6 ns (typ.) rr Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V V RM 85 Reverse voltage V 80 V R Maximum (peak) forward current I mA FM 300 * Average forward current I mA O 100 * Surge current (10ms) I A FSM 2 * PD (Note 1, 3) 125 Power dissipation mW P (Note 2, 3) 100 D T (Note 1) 150 j Junction temperature C JEDEC T (Note 2) 125 j JEITA T (Note 1) 55 to 150 stg Storage temperature C TOSHIBA 1-2U1A T (Note 2) 55 to 125 stg Weight: 0.006g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. Note 3: Total rating. *: Unit rating. Total rating = Unit rating 1.5. Start of commercial production 1994-09 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS382 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.61 F (1) F Forward voltage V I = 10 mA 0.74 V F (2) F V I = 100 mA 0.92 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.9 2.0 pF T R Reverse recovery time t I = 10 mA, Fig.1 1.6 4.0 ns rr F Pin Assignment (Top View) Marking 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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