Product Information

1SS226,LF

1SS226,LF electronic component of Toshiba

Datasheet
Toshiba Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.034 ea
Line Total: USD 102

2910 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
2910 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000

Stock Image

1SS226,LF
Toshiba

3000 : USD 0.0353
6000 : USD 0.0347
9000 : USD 0.0338
24000 : USD 0.0317
30000 : USD 0.0296
45000 : USD 0.0273
75000 : USD 0.0268
99000 : USD 0.0268
150000 : USD 0.0268

2910 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000

Stock Image

1SS226,LF
Toshiba

3000 : USD 0.0353
6000 : USD 0.0347
9000 : USD 0.0338
24000 : USD 0.0317
30000 : USD 0.0296
45000 : USD 0.0273
75000 : USD 0.0268

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

1SS226 Switching Diodes Silicon Epitaxial Planar 1SS226 1. Applications Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 S-Mini Start of commercial production 1982-09 2017-2021 2021-06-30 1 Toshiba Electronic Devices & Storage Corporation Rev.6.01SS226 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Note Rating Unit Peak reverse voltage V 85 V RM Reverse voltage V 80 R Peak forward current I (Note 1) 300 mA FM Average rectified current I (Note 1) 100 O Power dissipation P (Note 2), (Note 3) 200 mW D (Note 4) 150 Non-repetitive peak forward surge current I (Note 1), (Note 5) 2 A FSM Junction temperature T (Note 3) 150 j (Note 4) 125 Storage temperature T (Note 3) -55 to 150 stg (Note 4) -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit rating. Total rating = Unit rating 70% Note 2: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mmt, Cu pad: 0.8 mm2 3) Note 3: For devices with the ordering part number ending in LF(T. Note 4: For devices with the ordering part number in other than LF(T. Note 5: Pulse width 10 ms 5. Electrical Characteristics (Unless otherwise specified, T = 25 ) a Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.60 V F(1) F V I = 10 mA 0.72 F(2) F V I = 100 mA 0.90 1.20 F(3) F Reverse current I V = 30 V 0.1 A R(1) R I V = 80 V 0.5 R(2) R Total capacitance C V = 0 V, f = 1 MHz 0.9 3.0 pF t R Reverse recovery time t I = 10 mA 1.6 4.0 ns rr F See Fig. 5.1. Fig. 5.1 Reverse recovery time (trr) Test circuit 2017-2021 2021-06-30 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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