Product Information

SS210

SS210 electronic component of Taiwan Semiconductor

Datasheet
Taiwan Semiconductor Schottky Diodes & Rectifiers 2A,100V,SMD SCHOTTKY Rect
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.401 ea
Line Total: USD 0.4

11460 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
10904 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

SS210
Taiwan Semiconductor

1 : USD 0.3887
10 : USD 0.2794
100 : USD 0.1265
1000 : USD 0.1012
3000 : USD 0.0747
9000 : USD 0.0713

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

creat by art SS22 - SS215 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA RoRoHSHS Pb COCOMMPPLLIIANCANCEE Features For surface mounted application Easy pirk and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classigication 94V-0 Epitaxial construction High temperature soldering: 260/10 seconds at terminals Green compound with suffix on packing code & prefix on datecode. Dimensions in inches and (millimeters) Mechanical Data Case: Molded plastic Marking Diagram Terminals: Pure tin plated, lead free. SS2X = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packaging: 12mm tape per EIA STD RS-481 Y = Year Weight: 0.093 grams M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% SS SS SS SS SS SS SS SS Symbol Units Type Number 22 23 24 25 26 29 210 215 Maximum Recurrent Peak Reverse Voltage V 20 30 40 50 60 90 100 150 V RRM Maximum RMS Voltage V 14 21 28 35 42 63 70 105 V RMS Maximum DC Blocking Voltage V 20 30 40 50 60 90 100 150 V DC Maximum Average Forward Rectified Current I 2 A F(AV) at T (See Fig. 1) L Peak Forward Surge Current, 8.3 ms Single Half Sine- I 50 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) 0.5 0.70 0.85 0.95 V IF= 2 A 25 V F 0.4 0.65 0.70 0.80 100 Maximum DC Reverse T =25 0.4 0.1 mA A Current at Rated DC T =100 I 10 5 - R mA A Blocking Voltage T =125 A - 5.0 mA Typical Junction Capecitance (Note 2) C 130 pF j R 17 JL O Typical Thermal Resistance C/W R 75 JA O Operating Temperature Range T - 65 to + 125 - 65 to + 150 C J O Storage Temperature Range T - 65 to + 150 STG C Note 1: Pulse Test with PW=300u sec, 1% Duty Cycle Note 2: Measure at 1MHz and Applied Reverse Voltage of 4.0V D.C. Version:E11RATINGS AND CHARACTERISTIC CURVES (SS22 THRU SS215) FIG.1- MAXIMUM FORWARD CURRENT DERATING FIG. 2- MAXIMUM NON-REPETITIVE FORWARD CURVE SURGE CURRENT 2.5 50 8.3ms Single Half Sine 2.0 Wave JEDEC Method 40 AT RATED TL SS22-SS24 SS25-SS215 1.5 30 1.0 20 RESISTIVE OR 0.5 10 INDUCTIVE LOAD 0.0 0 50 60 70 80 90 100 110 120 130 140 150 160 1 10 100 o NUMBER OF CYCLES AT 60 Hz LEAD TEMPERATURE .( C) FIG. 4- TYPICALREVERSE CHARACTERISTICS FIG. 3- TYPICAL FORWARD CHARACTERISTICS 100 100 o SS22-SS24 TA=25 C SS25-SS215 TA=125 10 10 SS25-SS26 1 1 SS29-SS210 SS22- 0.1 TA=75 SS215 0.01 0.1 TA=25 PULSE WIDTH=300uS 1% DUTY CYCLE 0.001 0.01 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 PERCENT OF RATED PEAK REVERSE VOLYAGE(%) FORWARD VOLTAGE. (V) FIG. 6- TYPICAL TRANSIENT THERMAL FIG. 5- TYPICAL JUNCTION CAPACITANCE CHARCTERISTICS 100 1000 TA25 f=1.0MHz Vsig=50mVp-p 10 100 1 SS29-SS215 SS22-SS24 SS25-SS26 0.1 10 0.01 0.1 1 10 100 0.1 1 10 100 REVERSE VOLTAGE (V) T-PULSE DURATION. (sec) Version:E11 AVERAGE FORWARD a INSTANTANEOUS FORWARD A JUNCTION CAPACITANCE (pF) a CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE A CURRENT (mA) PEAK FORWARD SURGE TRANSIENT THERMAL A CURRENT (A) IMPEDANCE ( /W)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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