Product Information

SMCJ40A

SMCJ40A electronic component of Taiwan Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 1500W 46.8V 5% Unidi rectional TVS
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6217 ea
Line Total: USD 0.62

3513 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3513 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SMCJ40A
Taiwan Semiconductor

1 : USD 0.6217
10 : USD 0.5339
100 : USD 0.3762
500 : USD 0.3026
1000 : USD 0.2551
3000 : USD 0.2183
9000 : USD 0.2183
24000 : USD 0.2148
45000 : USD 0.2136

2910 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

SMCJ40A
Taiwan Semiconductor

3000 : USD 0.2338

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Taric
Vf - Forward Voltage
LoadingGif

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Additional Infomation About Product

SMCJ5V0(C)A SMCJ170(C)A Taiwan Semiconductor 1500W Transient Voltage Suppressor FEATURES Glass passivated junction 1500W peak pulse power capability on 10/1000s waveform Excellent clamping capability Low-Incremental surge resistance Fast response time: Typically less than 1.0ps from 0V to BV minimum for unidirectional and 5.0ns for bidirectional Typical I less than 1A above 10V R UL certificate E258596 UL94V-0 flammability classification SMC/DO-214AB Band denotes cathode on unidirectional devices only. No band on bi-directional devices. Bi-directional types have CA suffix where electrical chatacteristics apply in both directions suitable for bi-directional applications. ABSOLUTE MAXIMUM RATINGS Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation t =1ms P 1500 W p PPM Peak pulse current on 10/1000s waveform I see table A PPM Non-Repetitive Peak Forward Surge Current (1) I 200 A FSM Superimposed on Rated Load (JEDEC Method) T -55 to +150 C Junction temperature J T -55 to +150 C Storage temperature STG Note: 1. Measured on 8.3ms single half-sine wave duty cycle = 4 pulses per minute maximum. 1 Version: B1910 SMCJ5V0(C)A SMCJ170(C)A Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Breakdown Reverse Reverse Test Clamping Voltage Uni-directional Stand-Off Peak Pulse Leakage Part Current Voltage V Bi-directional (C) (2) Voltage BR Current Current Marking I at I T PPM (V) Device V I (A) at V RWM PPM RWM (mA) V (V) C (3) (V) I (A) R Min. Max. SMCJ5V0(C)A GDE 5.0 6.40 7.00 10 9.2 163.0 1000 SMCJ6V0(C)A GDG 6.0 6.67 7.37 10 10.3 145.6 1000 SMCJ6V5(C)A GDK 6.5 7.22 7.98 10 11.2 133.9 500 SMCJ7V0(C)A GDM 7.0 7.78 8.60 10 12.0 125.0 200 SMCJ7V5(C)A GDP 7.5 8.33 9.21 1 12.9 116.3 100 SMCJ8V0(C)A GDR 8.0 8.89 9.83 1 13.6 110.3 50 SMCJ8V5(C)A GDT 8.5 9.44 10.4 1 14.4 104.2 20 SMCJ9V0(C)A GDV 9.0 10.0 11.1 1 15.4 97.4 10 SMCJ10(C)A GDX 10 11.1 12.3 1 17.0 88.2 5 SMCJ11(C)A GDZ 11 12.2 13.5 1 18.2 82.4 5 SMCJ12(C)A GEE 12 13.3 14.7 1 19.9 75.3 5 SMCJ13(C)A GEG 13 14.4 15.9 1 21.5 69.8 5 SMCJ14(C)A GEK 14 15.6 17.2 1 23.2 64.7 5 SMCJ15(C)A GEM 15 16.7 18.5 1 24.4 61.5 5 SMCJ16(C)A GEP 16 17.8 19.7 1 26.0 57.7 5 SMCJ17(C)A GER 17 18.9 20.9 1 27.6 54.3 5 SMCJ18(C)A GET 18 20.0 22.1 1 29.2 51.4 5 SMCJ20(C)A GEV 20 22.2 24.5 1 32.4 46.3 5 SMCJ22(C)A GEX 22 24.4 26.9 1 35.5 42.3 5 SMCJ24(C)A GEZ 24 26.7 29.5 1 38.9 38.6 5 SMCJ26(C)A GFE 26 28.9 31.9 1 42.1 35.6 5 SMCJ28(C)A GFG 28 31.1 34.4 1 45.4 33.0 5 SMCJ30(C)A GFK 30 33.3 36.8 1 48.4 31.0 5 SMCJ33(C)A GFM 33 36.7 40.6 1 53.3 28.1 5 SMCJ36(C)A GFP 36 40.0 44.2 1 58.1 25.8 5 SMCJ40(C)A GFR 40 44.4 49.1 1 64.5 23.3 5 SMCJ43(C)A GFT 43 47.8 52.8 1 69.4 21.6 5 SMCJ45(C)A GFV 45 50.0 55.3 1 72.7 20.6 5 SMCJ48(C)A GFX 48 53.3 58.9 1 77.4 19.4 5 SMCJ51(C)A GFZ 51 56.7 62.7 1 82.4 18.2 5 SMCJ54(C)A GGE 54 60.0 66.3 1 87.1 17.2 5 SMCJ58(C)A GGG 58 64.4 71.2 1 93.6 16.0 5 SMCJ60(C)A GGK 60 66.7 73.7 1 96.8 15.5 5 SMCJ64(C)A GGM 64 71.1 78.6 1 103.0 14.6 5 SMCJ70(C)A GGP 70 77.8 86.0 1 113.0 13.3 5 SMCJ75(C)A GGR 75 83.3 92.1 1 121.0 12.4 5 SMCJ78(C)A GGT 78 86.7 95.8 1 126.0 11.9 5 2 Version: B1910

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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