Product Information

SMCJ40CA R6

SMCJ40CA R6 electronic component of Taiwan Semiconductor

Datasheet
Diode TVS Single Bi-Dir 40V 1.5KW 2-Pin SMC T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0846 ea
Line Total: USD 253.8

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 3000

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SMCJ40CA R6
Taiwan Semiconductor

3000 : USD 0.0846

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Polarity
Breakdown Voltage
Clamping Voltage
Packaging
Brand
Leakage Current Max
Peak Pulse Power Dissipation
Operating Temperature Classification
Operating Temp Range
Number Of Elements
Mounting
Package Type
Rad Hardened
Reverse Stand-Off Voltage
Test Current It
Pin Count
Peak Pulse Current
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SMCJ5.0(A) - SMCJ170(A) Taiwan Semiconductor 1500W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS Ideal for automated placement PARAMETER VALUE UNIT Glass passivated junction V 5 - 170 V WM Excellent clamping capability V 6.4 - 231 V Fast response time: Typically less than BR 1.0ps from 0 V to BV min P 1500 W PK Typical I less than 1A above 10V R T 150 C J MAX Moisture sensitivity level: level 1, per J-STD-020 Package DO-214AB (SMC) AEC-Q101 qualified available: ordering code with suffix H Configuration Single die Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC APPLICATIONS Immunization of sensitive devices in automotive, telecommunications, consumer electronics, and industrial equipment from electrostatic discharge (ESD) and transient voltages induced by load switching and lightning. MECHANICAL DATA CaseDO-214AB (SMC) DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating TerminalMatte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test PolarityAs marked Weight 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Peak power dissipation at T =25C, tp=1ms P 1500 W A PK Steady state power dissipation at T =25C P 5 W A D Peak forward surge current, 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load (2) Forward Voltage I =100A for Unidirectional only V 3.5 /5.0 V F F Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG Notes: 1. Non-repetitive current pulse per Fig. 3 and derated above T =25C per Fig. 2 A 2. V =3.5V on SMCJ5.0 - SMCJ90 devices and V =5.0V on SMCJ100 - SMCJ170 devices F F Devices for bipolar applications 1. For bidirectional use C or CA suffix for types SMCJ5.0 - types SMCJ170 2. Electrical characteristics apply in both directions 1 Version: Q1812 SMCJ5.0(A) - SMCJ170(A) Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 55 C/W JA Junction-to-case thermal resistance R 10 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Maximum Maximum Working Maximum peak Breakdown Test clamping voltage stand-off Reverse impulse Marking current voltage Part number voltage Leakage current V I BR T code I (Note 2) T (V) V (Note 3) (Note 2) WM (mA) V I C PPM (V) I V (A) I R WM PPM (V) (A) MIN. MAX. SMCJ5.0 GDD 6.4 7.3 10 5 1000 164 9.6 SMCJ5.0A GDE 6.4 7 10 5 1000 171 9.2 SMCJ6.0 GDF 6.67 8.15 10 6 1000 138 11.4 SMCJ6.0A GDG 6.67 7.37 10 6 1000 152 10.3 SMCJ6.5 GDH 7.22 8.82 10 6.5 500 128 12.3 SMCJ6.5A GDK 7.22 7.98 10 6.5 500 140 11.2 SMCJ7.0 GDL 7.78 9.51 10 7 200 118 13.3 SMCJ7.0A GDM 7.78 8.6 10 7 200 131 12.0 SMCJ7.5 GDN 8.33 10.30 1 7.5 100 110 14.3 SMCJ7.5A GDP 8.33 9.21 1 7.5 100 122 12.9 SMCJ8.0 GDQ 8.89 10.9 1 8 50 105 15.0 SMCJ8.0A GDR 8.89 9.83 1 8 50 115 13.6 SMCJ8.5 GDS 9.44 11.5 1 8.5 20 99 15.9 SMCJ8.5A GDT 9.44 10.4 1 8.5 20 109 14.4 SMCJ9.0 GDU 10 12.2 1 9 10 93 16.9 SMCJ9.0A GDV 10 11.1 1 9 10 102 15.4 SMCJ10 GDW 11.1 13.6 1 10 5 83 18.8 SMCJ10A GDX 11.1 12.3 1 10 5 92 17.0 SMCJ11 GDY 12.2 14.9 1 11 1 78 20.1 SMCJ11A GDZ 12.2 13.5 1 11 1 86 18.2 SMCJ12 GED 13.3 16.3 1 12 1 71 22.0 SMCJ12A GEE 13.3 14.7 1 12 1 79 19.9 SMCJ13 GEF 14.4 17.6 1 13 1 66 23.8 SMCJ13A GEG 14.4 15.9 1 13 1 73 21.5 SMCJ14 GEH 15.6 19.1 1 14 1 61 25.8 SMCJ14A GEK 15.6 17.2 1 14 1 67 23.2 SMCJ15 GEL 16.7 20.4 1 15 1 58 26.9 SMCJ15A GEM 16.7 18.5 1 15 1 64 24.4 SMCJ16 GEN 17.8 21.8 1 16 1 54 28.8 SMCJ16A GEP 17.8 19.7 1 16 1 60 26.0 SMCJ17 GEQ 18.9 23.1 1 17 1 51 30.5 SMCJ17A GER 18.9 20.9 1 17 1 57 27.6 SMCJ18 GES 20 24.4 1 18 1 48 32.2 SMCJ18A GET 20 22.1 1 18 1 53 29.2 SMCJ20 GEU 22.2 27.1 1 20 1 43 35.8 SMCJ20A GEV 22.2 24.5 1 20 1 48 32.4 SMCJ22 GEW 24.4 29.8 1 22 1 39 39.4 SMCJ22A GEX 24.4 26.9 1 22 1 44 35.5 SMCJ24 GEY 26.7 32.6 1 24 1 36 43.0 SMCJ24A GEZ 26.7 29.5 1 24 1 40 38.9 SMCJ26 GFD 28.9 35.3 1 26 1 33 46.6 SMCJ26A GFE 28.9 31.9 1 26 1 37 42.1 SMCJ28 GFF 31.1 38 1 28 1 31 50.0 2 Version: Q1812

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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