Product Information

RS3M R7G

RS3M R7G electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 500ns 3A 1000V Fast Recovery Rectifier
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1700: USD 0.2486 ea
Line Total: USD 422.62

0 - Global Stock
MOQ: 1700  Multiples: 1700
Pack Size: 1700

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Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1700
Multiples : 1700

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RS3M R7G
Taiwan Semiconductor

1700 : USD 0.1602
9350 : USD 0.1519
24650 : USD 0.1483
49300 : USD 0.1448

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Additional Infomation About Product

CREAT BY ART RS3A - RS3M 3.0 AMP. Surface Mount Fast Recovery Rectifiers SMC/DO-214AB Features For surface mounted application Glass passivated junction chip Built-in strain relief, ideal for automated placement Plastic material used carries Underwriters Laboratory Classification 94V-0 Fast switching for high efficiency High temperature soldering: 260 / 10 seconds at terminals Green compound with suffix on packing code & prefix on datecode Mechanical Data Case: Molded plastic Terminals: Pure tin plated, Lead free Polarity: Indicated by cathode band Packing: 16mm tape per EIA STD RS-481 Weight: 0.21 grams Ordering Information (example) Packing code Packing code Part No. Package Packing (Green) R7G RS3A SMC 850 / 7 REEL R7 Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. RS RS RS RS RS RS RS Symbol Unit Parameter 3A 3B 3D 3G 3J 3K 3M Maximum Repetitive Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM V Maximum RMS Voltage 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 3 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 100 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.3 V F 3 A Maximum Reverse Current Rated VR T =25 10 A I uA R T =125 250 A Maximum Reverse Recovery Time (Note 2) Trr 150 250 500 nS Typical Junction Capacitance (Note 3) Cj 60 pF R 50 jA O Typical Thermal Resistance C/W R 15 jL O Operating Temperature Range T - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:G13RATINGS AND CHARACTERISTIC CURVES (RS3A THRU RS3M) FIG. 2 TYPICAL REVERSE CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE 100 3.5 3 TA=125 2.5 10 2 1.5 1 TA=75 RESISTIVE OR 1 0.5 INDUCTIVE LOAD 0 0 255075 100 125 150 TA=25 o LEAD TEMPERATURE ( C) 0. 1 FIG. 3 MAXIMUM NON-REPETITIVE FORWARD 0 20 40 60 80 100 120 140 SURGE CURRENT 150 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 8.3mS Single Half Sine Wave 125 JEDEC Method FIG. 5 TYPICAL FORWARD CHARACTERISTICS 100 100 75 Pulse Width=300us 1% Duty Cycle 50 25 TA=25 0 TA=125 10 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL JUNCTION CAPACITANCE 100 TA=25 TA=25 1 f=1.0MHz Vsig=50mVp-p TA=40 0. 1 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 10 FORWARD VOLTAGE (V) 1 10 100 REVERSE VOLTAGE (V) Version:G13 PEAK FORWARD SURGE AVERAGE FORWARD CURRENT CAPACITANCE (pF) CURRENT (A) (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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