Product Information

1N5401G-K R0G

1N5401G-K R0G electronic component of Taiwan Semiconductor

Datasheet
Rectifiers Diode 3A 100V DO-201AD

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.0808 ea
Line Total: USD 404

0 - Global Stock
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 5000
Multiples : 5000

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1N5401G-K R0G
Taiwan Semiconductor

5000 : USD 0.0808
10000 : USD 0.0735
25000 : USD 0.0694
50000 : USD 0.0642

     
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4 1N5400G-K - 1N5408G-K Taiwan Semiconductor 3A, 50V - 1000V Glass Passivated Rectifier FEATURES KEY PARAMETERS Glass passivated chip junction PARAMETER VALUE UNIT High current capability, Low V F I 3 A F(AV) High reliability V 50 - 1000 V RRM High surge current capability Low power loss, high efficiency I 125 A FSM Compliant to RoHS Directive 2011/65/EU and T 150 C J MAX in accordance to WEEE 2002/96/EC Package DO-201AD Halogen-free according to IEC 61249-2-21 Configuration Single Die APPLICATIONS High frequency rectification Freewheeling application Switching mode converters and inverters in computer and telecommunication. MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94V-0 flammability rating Packing code with suffix means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.2 g (approximately) DO-201AD ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 PARAMETER SYMBOL UNIT G-K G-K G-K G-K G-K G-K G-K Marking code on the device 1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G Repetitive peak reverse V 50 100 200 400 600 800 1000 V RRM voltage Reverse voltage, total rms V 35 70 140 280 420 560 700 V R(RMS) value Maximum DC blocking V 50 100 200 400 600 800 1000 V DC voltage Forward current I 3 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave I 125 A FSM superimposed on rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:B1705 4 1N5400G-K - 1N5408G-K Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient thermal resistance R 45 C/W JA Junction-to-case thermal resistance R 15 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT 1N5400G-K - 1.1 V 1N5401G-K 1N5402G-K (1) Forward voltage per diode 1N5404G-K I = 3A,T = 25C V F J F - 1.0 1N5406G-K V 1N5407G-K 1N5408G-K - 5 A T = 25C J (2) Reverse current rated V per diode I R R - 100 A T = 125C J 1 MHz, V =4.0V 25 - Junction capacitance C pF R J Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PACKING CODE PART NO. PACKING CODE PACKAGE PACKING SUFFIX A0 DO-201AD 500 / Ammo box 1N540xG-K R0 G DO-201AD 1,250 / 13 Paper reel (Note 1, 2) B0 DO-201AD 500 / Bulk packing Notes: 1. defines voltage from 50V (1N5400G-K) to 1000V (1N5408G-K) 2. Whole series with green compound (halogen-free) EXAMPLE P/N PACKING CODE EXAMPLE P/N PART NO. PACKING CODE DESCRIPTION SUFFIX 1N5400G-K A0G 1N5400G-K A0 G Green compound 2 Version:B1705

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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