Product Information

LL4448 L1G

LL4448 L1G electronic component of Taiwan Semiconductor

Datasheet
Diodes - General Purpose Power Switching MMELF 75V 0.15A Switching Diode & Array
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1944 ea
Line Total: USD 0.19

21882 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
18435 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

LL4448 L1G
Taiwan Semiconductor

1 : USD 0.1852
10 : USD 0.1322
100 : USD 0.0644
1000 : USD 0.0368
2500 : USD 0.0333
12500 : USD 0.0265
50000 : USD 0.023
100000 : USD 0.0219

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

LL4148/LL4448/LL914B Taiwan Semiconductor Small Signal Product CREAT BY ART High Speed SMD Switching Diode FEATURES - Fast switching device (trr<4.0ns) - Surface device type mounting - Matte Tin(Sn) terminal finish - Pb free version and RoHS compliant MECHANICAL DATA MINI MELF - Case: Mini-MELF Package - High temperature soldering guaranteed: 270C/10s Hermetically Sealed Glass - Polarity: Indicated by black cathode band - Weight: 31mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT P Power Dissipation 500 mW D Repetitive Peak Reverse Voltage V 75 V RRM Reverse Voltage V 75 V R Peak Forward Surge Current (Note 1) I 2 A FSM Non-Repetitive Peak Forward Current I 450 mA FM I Mean Forward Current 150 mA F(AV) Forward Continuous Current I 150 mA F Repetitive Peak Forward Current I 450 mA FRM o Thermal Resistance (Junction to Ambient) (Note 2) R 300 JA C/W o Junction and Storage Temperature Range T , T -65 to +175 J STG C PARAMETER MIN MAX SYMBOL UNIT I =100A 100 - R V Reverse Breakdown Voltage V (BR) I =5A 75 - R Forward Voltage - - I =5 mA LL4448, LL914B 0.62 0.72 F V V F LL4148 I =50 mA - 1 F I =100 mA LL4448, LL914B - 1 F V =20V - 25 nA R Reverse Leakage Current I R V =75V - 5 A R V =0 f=1.0MHz C Junction Capacitance -4 pF R J Reverse Recovery Time (Note 3) t - 4 ns rr Note 1: Test condition : 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Note 2: Valid provided that electrodes are kept at ambient temperature Note 3: Reverse recovery test conditions : I =I =10mA, R =100, I =1mA F R L RR Document Number: DS S1408022 Version: J15LL4148/LL4448/LL914B Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 1 Typical Forward Characteristics Fig. 2 Reverse Current VS. Reverse Voltage 1500 100 1200 10 900 1 600 0.1 300 0 0.01 0.001 0.01 0.1 1 10 100 1000 0 20 40 60 80 100 120 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 Admissible Power Dissipation Curve Fig. 4 Typical Junction Capacitance 1.5 600 500 1.2 400 0.9 300 0.6 200 0.3 100 0 0.0 0 5 10 15 20 25 30 0 50 100 150 200 Reverse Voltage (V) o Ambient Temperature ( C) Fig. 5 Forward Resistance VS. Forward Current 10000 1000 100 10 1 0.01 0.1 1 10 100 Forward Current (mA) Document Number: DS S1408022 Version: J15 Dynamic Forward Resistance (Ohm) Power Dissipation (mW) Instantaneous Forward Current (mA) Reverse Current (A) Junction Capacitance (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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