DHG50X600NA IXYS

DHG50X600NA advanced V= 600V RRM Sonic Fast Recovery Diode I= 2x 25A FAV tn= 35s rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG50X600NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Antiparallel diode for high frequency Isolation Voltage: V~ 3000 Very low leakage current switching devices Industry standard outline Very short recovery time Antisaturation diode RoHS compliant Improved thermal behaviour Snubber diode Epoxy meets UL 94V-0 Very low Irm-values Free wheeling diode Base plate: Copper Very soft recovery behaviour Rectifiers in switch mode power internally DCB isolated Avalanche voltage rated for reliable supplies (SMPS) Advanced power cycling operation Uninterruptible power supplies (UPS) Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130829a 2013 IXYS all rights reservedDHG50X600NA advanced Ratings Fast Diode Conditions Symbol Definition min. typ. max. Unit V T = 25C 600 V max. non-repetitive reverse blocking voltage RSM VJ V T = 25C 600 V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = V600 T = 25C 100 A R R VJ V = V600 T = C125 2 mA R VJ forward voltage drop V I = A25 T = 25C 2.18 V F F VJ 2.88 V I = A50 F I = A25 T = C125 2.13 V F VJ I = A50 3.00 V F average forward current T = C60 T = C150 25 A I FAV C VJ rectangular d = 0.5 V threshold voltage T = C150 1.20 V F0 VJ for power loss calculation only slope resistance r 36 m F thermal resistance junction to case R 1.2 K/W thJC thermal resistance case to heatsink R K/W thCH 0.10 P total power dissipation T = 25C 105 W tot C max. forward surge current I t = 10 ms (50 Hz), sine V = 0 V T = 45C 200 A R FSM VJ junction capacitance C V = V400 f = 1 MHz T = 25C 16 pF J R VJ I max. reverse recovery current T=25C 12 A RM VJ I=A25 V=V400 T=125C tbd A F R VJ reverse recovery time t -di /dt=A600/s T=25C 35 ns F rr VJ T=125C tbd ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130829a 2013 IXYS all rights reserved