Product Information

LL4448 L1

LL4448 L1 electronic component of Taiwan Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching MMELF, 75V, 0.15A, Switching Diode & Array

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7500: USD 0.0098 ea
Line Total: USD 73.5

0 - Global Stock
MOQ: 7500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 10000
Multiples : 2500

Stock Image

LL4448 L1
Taiwan Semiconductor

10000 : USD 0.0108

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 10000
Multiples : 10000

Stock Image

LL4448 L1
Taiwan Semiconductor

10000 : USD 0.0134
25000 : USD 0.0134
50000 : USD 0.0105

0 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 7500
Multiples : 2500

Stock Image

LL4448 L1
Taiwan Semiconductor

7500 : USD 0.0098

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Max Surge Current
Configuration
Packaging
Brand
Forward Voltage Drop
Deleted
Operating Temp Range
Package Type
Pin Count
Operating Temperature Classification
Rad Hardened
Peak Rep Rev Volt
Rev Curr
Rev Recov Time
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LL4148/LL4448/LL914B Taiwan Semiconductor Small Signal Product CREAT BY ART High Speed SMD Switching Diode FEATURES - Fast switching device (trr<4.0ns) - Surface device type mounting - Matte Tin(Sn) terminal finish - Pb free version and RoHS compliant MECHANICAL DATA MINI MELF - Case: Mini-MELF Package - High temperature soldering guaranteed: 270C/10s Hermetically Sealed Glass - Polarity: Indicated by black cathode band - Weight: 31mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT P Power Dissipation 500 mW D Repetitive Peak Reverse Voltage V 75 V RRM Reverse Voltage V 75 V R Peak Forward Surge Current (Note 1) I 2 A FSM Non-Repetitive Peak Forward Current I 450 mA FM I Mean Forward Current 150 mA F(AV) Forward Continuous Current I 150 mA F Repetitive Peak Forward Current I 450 mA FRM o Thermal Resistance (Junction to Ambient) (Note 2) R 300 JA C/W o Junction and Storage Temperature Range T , T -65 to +175 J STG C PARAMETER MIN MAX SYMBOL UNIT I =100A 100 - R V Reverse Breakdown Voltage V (BR) I =5A 75 - R Forward Voltage - - I =5 mA LL4448, LL914B 0.62 0.72 F V V F LL4148 I =50 mA - 1 F I =100 mA LL4448, LL914B - 1 F V =20V - 25 nA R Reverse Leakage Current I R V =75V - 5 A R V =0 f=1.0MHz C Junction Capacitance -4 pF R J Reverse Recovery Time (Note 3) t - 4 ns rr Note 1: Test condition : 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Note 2: Valid provided that electrodes are kept at ambient temperature Note 3: Reverse recovery test conditions : I =I =10mA, R =100, I =1mA F R L RR Document Number: DS S1408022 Version: J15LL4148/LL4448/LL914B Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 1 Typical Forward Characteristics Fig. 2 Reverse Current VS. Reverse Voltage 1500 100 1200 10 900 1 600 0.1 300 0 0.01 0.001 0.01 0.1 1 10 100 1000 0 20 40 60 80 100 120 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 Admissible Power Dissipation Curve Fig. 4 Typical Junction Capacitance 1.5 600 500 1.2 400 0.9 300 0.6 200 0.3 100 0 0.0 0 5 10 15 20 25 30 0 50 100 150 200 Reverse Voltage (V) o Ambient Temperature ( C) Fig. 5 Forward Resistance VS. Forward Current 10000 1000 100 10 1 0.01 0.1 1 10 100 Forward Current (mA) Document Number: DS S1408022 Version: J15 Dynamic Forward Resistance (Ohm) Power Dissipation (mW) Instantaneous Forward Current (mA) Reverse Current (A) Junction Capacitance (pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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