Product Information

ES1GL R3G

ES1GL R3G electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 35ns, 1A, 400V, Super Fast Recovery Rectifier

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6992 ea
Line Total: USD 0.7

4722 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4722 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

ES1GL R3G
Taiwan Semiconductor

1 : USD 0.6992
10 : USD 0.4244
100 : USD 0.3047
500 : USD 0.2519
1000 : USD 0.2473
1800 : USD 0.2197
9000 : USD 0.2173
23400 : USD 0.215
48600 : USD 0.2139

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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ES1AL - ES1JL Taiwan Semiconductor CREAT BY ART 1A, 50V - 600V Surface Mount Super Fast Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Low profile package - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Sub SMA Case: Sub SMA Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part No. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.019 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A ES ES ES ES ES ES ES ES PARAMETER SYMBOL UNIT 1AL 1BL 1CL 1DL 1FL 1GL 1HL 1JL Marking code EAL EBL ECL EDL EFL EGL EHL EJL Maximum repetitive peak reverse voltage V 50 100 150 200 300 400 500 600 V RRM Maximum RMS voltage V 35 70 105 140 210 280 350 420 V RMS Maximum DC blocking voltage V 50 100 150 200 300 400 500 600 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 0.95 1.3 1.7 V F 1 A T =25C 5 J Maximum reverse current rated V I A R R T =125C 100 J Typical junction capacitance (Note 2) C 10 8 pF J Maximum reverse recovery time (Note 3) t 35 ns rr R 35 JL Typical thermal resistance C/W R 85 JA Operating junction temperature range T - 55 to +150 C J Storage temperature range T - 55 to +150 C STG Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Measured at 1 MHz and Applied V =4.0 Volts. R Note 3: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Document Number: DS D1410026 Version: K15ES1AL - ES1JL Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING CODE PACKING CODE PACKAGE PACKING SUFFIX SUFFIX RU Sub SMA 1,800 / 7 Plastic reel (8mm tape) RV Sub SMA 3,000 / 7 Plastic reel (8mm tape) RT Sub SMA 7,500 / 13 Paper reel (8mm tape) MT Sub SMA 7,500 / 13 Plastic reel (8mm tape) RQ Sub SMA 10,000 / 13 Paper reel (8mm tape) MQ Sub SMA 10,000 / 13 Plastic reel (8mm tape) ES1xL H G (Note 1) R3 Sub SMA 1,800 / 7 Plastic reel (12mm tape) RF Sub SMA 3,000 / 7 Plastic reel (12mm tape) R2 Sub SMA 7,500 / 13 Paper reel (12mm tape) M2 Sub SMA 7,500 / 13 Plastic reel (12mm tape) RH Sub SMA 10,000 / 13 Paper reel (12mm tape) MH Sub SMA 10,000 / 13 Plastic reel (12mm tape) Note 1: defines voltage from 50V (ES1AL) to 600V (ES1JL) EXAMPLE PART NO. PACKING CODE PREFERRED P/N PART NO. PACKING CODE DESCRIPTION SUFFIX SUFFIX AEC-Q101 qualified ES1JLHRUG ES1JL H RU G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 2 TYPICAL FORWARD CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE 100 1.2 Pulse Width=300s 1% Duty Cycle 1 ES1HL-ES1JL 10 ES1FL-ES1GL 0.8 ES1AL-ES1DL 0.6 0.4 RESISTIVE OR 1 INDUCTIVE LOAD 0.2 0 0. 1 80 90 10 0 11 0 12 0 13 0 14 0 15 0 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 o LEAD TEMPERATURE ( C) FORWARD VOLTAGE (V) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE FIG. 4 TYPICAL REVERSE CHARACTERISTICS CURRENT 1000 30 100 25 8.3ms Single Half Sine Wave T =125C J 20 10 15 T =75C J 1 10 5 0. 1 T =25C J 0 0. 01 1 10 100 0 20 40 60 80 100 120 140 NUMBER OF CYCLES AT 60 Hz PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1410026 Version: K15 AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS FORWARD CURRENT INSTANTANEOUS REVERSE CURRENT (A) (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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