Product Information

ES1J F3G

ES1J F3G electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 35ns 1A 600V Super Fast Recovery Rectifier

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3600: USD 0.0941 ea
Line Total: USD 338.76

0 - Global Stock
MOQ: 3600  Multiples: 3600
Pack Size: 3600
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 3600
Multiples : 3600

Stock Image

ES1J F3G
Taiwan Semiconductor

3600 : USD 0.0941
9000 : USD 0.0835
23400 : USD 0.0799
48600 : USD 0.0764

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
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ES1A thru ES1J Taiwan Semiconductor CREAT BY ART Surface Mount Super Fast Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Super fast recovery time for high efficiency - Built-in strain rellef - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - Green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T =25 unless otherwise noted) A ES ES ES ES ES ES ES ES PARAMETER SYMBOL UNIT 1A 1B 1C 1D 1F 1G 1H 1J Maximum repetitive peak reverse voltage V 50 100 150 200 300 400 500 600 V RRM Maximum RMS voltage V 35 70 105 140 210 280 350 420 V RMS Maximum DC blocking voltage V 50 100 150 200 300 400 500 600 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 0.95 1.3 1.7 V F 1 A 5 Maximum reverse current rated VR T =25 J I A R T =100 100 J Maximum reverse recovery time (Note 2) 35 Trr ns Typical junction capacitance (Note 3) Cj 16 18 pF R 35 JL O Typical thermal resistance C/W R 85 JA O Operating junction temperature range T - 55 to +150 C J O Storage temperature range T - 55 to +150 STG C Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied V =4.0 Volts R Document Number: DS D1405052 Version:J14ES1A thru ES1J Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE CODE R3 SMA 1,800 / 7 Plastic reel R2 SMA 7,500 / 13 Paper reel M2 SMA 7,500 / 13 Plastic reel Prefix F3 Folded SMA 1,800 / 7 Plastic reel ES1x Suffix (Note 1) F2 Folded SMA 7,500 / 13 Paper reel F4 Folded SMA 7,500 / 13 Plastic reel E3 Clip SMA 1,800 / 7 Plastic reel N/A E2 Clip SMA 7,500 / 13 Plastic reel Note 1: defines voltage from 50V (ES1A) to 600V (ES1J) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PART NO. PACKING CODE DESCRIPTION QUALIFIED CODE ES1J R3 ES1J R3 ES1J R3G R3 G Green compound ES1J ES1JHR3 H R3 AEC-Q101 qualified ES1J RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2 TYPICAL INSTANTANEOUS FORWARD FIG.1 MAXIMUM FORWARD CURRENT CHARACTERISTICS DERATING CURVE 100 Pulse Width=300s 1. 2 1% Duty Cycle 1 ES1F-1G 10 ES1A-D 0. 8 0. 6 0. 4 1 RESISTER OR 0. 2 INDUCTIVE LOAD 0 ES1H-1J 80 90 100 110 120 130 140 150 0. 1 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 o LEAD TEMPERATURE ( C) FORWARD VOLTAGE (V) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 MAXIMUM NON-REPETITIVE FORWARD PEAK 1000 SURGE CURRENT 30 TJ=125 8.3mS Single Half Sine Wave 100 25 (JEDEC Method) 20 10 TJ=75 15 1 10 TJ=25 5 0. 1 0 1 10 100 0. 01 NUMBER OF CYCLES AT 60 Hz 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1405052 Version:J14 PEAK FORWARD SURGE CURRENT AVERAGE FORWARD A (A) CURRENT (A) INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT (A) (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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