Product Information

1N4148W-G RHG

1N4148W-G RHG electronic component of Taiwan Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching SOD-123, 100V, 0.15A, Switching Diode & Array
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2575 ea
Line Total: USD 0.26

11245 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
10202 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

1N4148W-G RHG
Taiwan Semiconductor

1 : USD 0.1656
10 : USD 0.1162
100 : USD 0.0495
1000 : USD 0.0345
3000 : USD 0.0265
9000 : USD 0.023
24000 : USD 0.0219
45000 : USD 0.0184
99000 : USD 0.0173

Read More Specifications

     
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Product Category
RoHS - XON
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Cnhts
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Mxhts
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Additional Infomation About Product

1N4148W-G Taiwan Semiconductor Small Signal Product High Speed SMD Switching Diode FEATURES - Fast switching device (t <4.0ns) rr - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 SOD-123 MECHANICAL DATA - Case: Bend lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260C/10s - Polarity: Indicated by cathode band - Weight: 10 0.5 mg - Marking Code: T4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power dissipation P 350 mW D DC blocking voltage V 100 V R Repetitive peak reverse voltage V 100 V RRM Work peak reverse voltage V 100 V RWM V RMS reverse voltage 70 V R(RMS) Repetitive peak forward current I 300 mA FRM Mean forward current I 150 mA O Non-repetitive peak forward surge current t=1 ms 2.0 I A FSM t=10 ms 1.0 Thermal resistance (Junction to Ambient) (Note 1) R 357 C/W JA Junction and storage temperature range T , T -65 to +150 C J STG PARAMETER SYMBOL MIN MAX UNIT I =1.0mA - 0.715 Forward voltage F I =10mA - 0.855 F V V F I =50mA - 1.000 F I =150mA - 1.250 F V =20V - 25 nA R V =75V - 2.5 A R I Reverse leakage current R V =25V, T =150C - 30 R J A V =75V, T =150C - 50 A R J V =0, f=1.0MHz Junction capacitance C - 2.0 pF R J (Note 2) t - 4.0 Reverse recovery time ns rr Notes: 1. Valid provided that terminals are kept at ambient temperature Notes: 2. Test Conditions : I =10mA, I =10mA, R =100, I =1mA F R L RR Version: D16011N4148W-G Taiwan Semiconductor Small Signal Product ORDERING INFORMATION PART NO. PACKING CODE PACKING CODE PACKAGE PACKING SUFFIX RH G SOD-123 3K / 7 Reel 1N4148W-G Note: Whole series with green compound EXAMPLE EXAMPLE PACKING CODE PACKING CODE DESCRIPTION PART NO. PART NO. SUFFIX 1N4148W-G RHG 1N4148W-G RH G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig.1 Typical Forward Characteristics Fig. 2 Reverse Current vs Junction Temperature 10000 1000 100 1000 10 100 1 10 0.1 VR=20V 1 0.01 0 20 40 60 80 100 120 140 160 180 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Instantaneous Forward Voltage (V) Junction Temperature (Tj) Version: D1601 Instantaneous Forward Current(mA) Reverse Current (nA)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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