Product Information

SSF65R360S2

SSF65R360S2 electronic component of Super Semiconductor

Datasheet
650V 13A 330mO@10V,6.5A 31W N Channel TO-220F-3 MOSFETs ROHS
Manufacturer: Super Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3852 ea
Line Total: USD 1.39

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

SSF65R360S2
Super Semiconductor

1 : USD 1.3852
10 : USD 1.1418
30 : USD 0.9665
100 : USD 0.8204
500 : USD 0.7961
1000 : USD 0.784

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
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Additional Infomation About Product

This Super Semiconductor SSF65R360S2 MOSFET is a 650 volt, 13A, 330mO@10V, 6.5A 31W N-channel design with a TO-220F-3 package. It is RoHS compliant and is designed for controlling high-side switches. The high-side driving of loads below the supply voltage can cause turn-on problems due to the threshold voltage of the device. To solve this problem, Super Semiconductor has added reverse transfer characteristics to the SSF65R360S2. This allows the device to be driven at lower than the normal threshold voltage and makes it easier to control. The device also features low gate charge and excellent on-state rds(on). This makes it ideal for switching applications such as DC/DC converters, motor drives, and switch-mode power supplies.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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