Product Information

X00619MN5AL2

X00619MN5AL2 electronic component of STMicroelectronics

Datasheet
SCRs 0.8A Sensitive Gate 600V SCR 30-200uA

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5766 ea
Line Total: USD 1.58

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 1000

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X00619MN5AL2
STMicroelectronics

3000 : USD 0.867
4000 : USD 0.8598
5000 : USD 0.8525
6000 : USD 0.8453
10000 : USD 0.8379
20000 : USD 0.8305
25000 : USD 0.8231
30000 : USD 0.8157
50000 : USD 0.8084

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

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X00619MN5AL2
STMicroelectronics

1 : USD 0.5267
30 : USD 0.4504
300 : USD 0.4139

0 - WHS 3


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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X00619MN5AL2
STMicroelectronics

1 : USD 1.5766
10 : USD 0.7687
100 : USD 0.4337
500 : USD 0.3531
1000 : USD 0.2895
2000 : USD 0.2706

0 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 22
Multiples : 1

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X00619MN5AL2
STMicroelectronics

22 : USD 0.432
25 : USD 0.3886
100 : USD 0.3851
250 : USD 0.3815
500 : USD 0.3739

0 - WHS 5


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 22
Multiples : 1

Stock Image

X00619MN5AL2
STMicroelectronics

22 : USD 0.4683
25 : USD 0.4171
100 : USD 0.4126
250 : USD 0.4084
500 : USD 0.4002

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
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X00619 Datasheet 0.8 A - 600 V sensitive gate SCR A Features On-state rms current, I 0.8 A T(RMS) G Repetitive peak off-state voltage 600 V K Triggering gate current from 30 to 200 A ECOPACK2 compliant Applications A A G G K K Limited gate current topologies TO-92 (straight) TO-92 (preform) A Ground fault circuit interrupters Overvoltage crowbar protection in power supplies G Protection in electronic ballasts A K Capacitive discharge ignitions SOT-223 Ignitors (lighting, oven...) Description The X00619 SCR can be used as on/off function in applications where topology does not offer high current for gate triggering. This device is optimized in forward voltage drop and inrush current capabilities for reduced power losses and high reliability in harsh environments. Product status link TO92 straight leads (bulk packing) TO92 leads preform X00619 (tape and reel or ammopack packing) SOT-223 (tape and reel packing) Product summary I up to 0.8 A T(RMS) V /V DRM RRM 600 V I From 30 to 200 A GT T max. 125 C j DS6289 - Rev 4 - December 2021 www.st.com For further information contact your local STMicroelectronics sales office.X00619 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values, T = 25 C unless otherwise specified) j Symbol Parameters Value Unit T = 83 C TO-92 L I On-state RMS current (180 conduction angle) 0.8 A T(RMS) T = 107 C SOT-223 amb T = 83 C TO-92 L I Average on-state current (180 conduction angle) 0.5 A T(AV) SOT-223 T = 107 C amb t = 8.3 ms 10 Non repetitive surge peak on-state current, p I T = 25 C A TSM j T initial = 25 C j t = 10 ms 9 p 2 2 2 t = 10 ms T = 25 C I t I t value for fusing 0.4 A s p j Critical rate of rise of on-state current T = 125 C dl/dt F = 60 Hz 50 A/s j I = 2 x I , t 100 ns G GT r I t = 20 s T = 125 C Peak gate current 1 A GM p j P T = 125 C Average gate power dissipation 0.1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Parameters Value Unit Min. 30 I A GT V = 12 V, R = 140 Max. 200 D L V Max. 0.8 V GT V V = V , R = 3.3 k, R = 1 k, T = 125 C Min. 0.2 V GD D DRM L GK j V I = 10 A Min. 5 RG RG I I = 50 mA, RGK = 1 k Max. 5 mA H T I I = 1 mA, R = 1 k Max. 6 mA L G GK V = 67 % V , R = 1 k, T = 125 C dV/dt Min. 40 V/s D DRM GK j Table 3. Static electrical characteristics Symbol Test conditions Value Unit V I = 1 A, t = 380 s 25 C Max. 1.35 V TM TM p V Threshold on-state voltage 125 C Max. 0.85 V TO R Dynamic resistance 125 C Max. 245 m d I V = V , R = 1 k 25 C 1 DRM RRM GK DRM Max. A I V = V , R = 1 k 125 C 100 RRM DRM RRM GK DS6289 - Rev 4 page 2/13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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