Product Information

X0203NN 5AA4

X0203NN 5AA4 electronic component of STMicroelectronics

Datasheet
SCRs 1.25A SENSITIVE GATE SCRs
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1

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X0203NN 5AA4
STMicroelectronics

1000 : USD 0.4483
2000 : USD 0.4311
10000 : USD 0.4225
25000 : USD 0.3964
50000 : USD 0.3899
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Type
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Additional Infomation About Product

X02xxxN SENSITIVE GATE SCR FEATURES I =1.4A T(RMS) V = 200V to 800V DRM Low I < 200 A GT A K A G DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. SOT223 These parts are intended for general purpose high (Plastic) volume applications using surface mount technology. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit I * RMS on-state current Ttab= 90C 1.4 A T(RMS) (180 conductionangle) Ta=75C 1.0 A I * Mean on-state current Ttab= 90C 0.9 A T(AV) (180 conductionangle) Ta=75C 0.64 A I Non repetitive surge peak on-state current tp = 8.3 ms 25 A TSM (T initial = 25C) j tp = 10 ms 22.5 A 2 2 2 ItI t Value for fusing tp = 10 ms 2.5 A s dI/dt Critical rate of rise of on-state current 30 A/s I =10mA di /dt = 0.1 A/s. G G T Storage and operating junction temperature range - 40, + 150 C stg T - 40, + 125 j Tl Maximum lead temperature for soldering during 10s 260 C 2 * : With 5cm copper (e=35m) surface under tab. Voltage Symbol Parameter Unit BD M N V Repetitive peak off-state voltage 200 400 600 800 V DRM V Tj = 125CRGK =1K RRM January 1995 1/5X02xxxN THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient * 60 C/W Rth(j-t) Junction to tab for DC 25 C/W 2 * : With 5cm copper (e=35m) surface under tab. GATE CHARACTERISTICS (maximum values) P = 0.2 W P = 3 W (tp = 20 s) I = 1.2 A (tp = 20 s) G (AV) GM GM ELECTRICAL CHARACTERISTICS Sensitivity Symbol Test Conditions Unit 02 03 05 I V =12V (DC) R =140 Tj= 25C MIN 20 20 A GT D L MAX 200 200 50 V V =12V (DC) R =140 Tj= 25C MAX 0.8 V GT D L V V =V R =3.3k Tj= 125C MIN 0.1 V GD D DRM L R =1K GK V I =10A Tj= 25C MIN 8 V RGM RG tgd V =V I =3xI ) Tj= 25C TYP 0.5 s D DRM TM T(AV dI /dt = 0.1A/sI = 10mA G G I I = 50mA R =1 K Tj= 25C MAX 5 mA H T GK I I =1mA R =1K Tj= 25C MAX 6 mA L G GK I = 2.8A tp= 380s VTM TM Tj= 25C MAX 1.5 V IDRM VD =VDRM RGK =1K Tj= 25C MAX 5 A I V =V RRM R RRM Tj= 110C MAX 200 A dV/dt V =67%V R =1 K Tj= 110C TYP 15 20 15 V/s D DRM GK tq I =3xI )V =35V Tj= 110C MAX 100 s TM T(AV R dI/dt=10A/s tp=100s dV/dt=2V/s VD= 67%VDRM RGK =1 K ORDERING INFORMATION X 0203M N PACKAGE : SCR TOP GLASS N = SOT223 CURRENT VOLTAGE SENSITIVITY 2/5

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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