VND1NV04-1-E

VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features 3 Parameter Symbol Value 1 Max on-state resistance (per ch.) R 250 m ON TO-252 (DPAK) Current limitation (typ) I 1.7 A LIMH 2 Drain-source clamp voltage V 40 V CLAMP 3 2 1 Linear current limitation SOT-223 SO-8 Thermal shutdown Short circuit protection Integrated clamp Description Low current drawn from input pin Diagnostic feedback through input pin The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in ESD protection STMicroelectronics VIPower M0-3 Technology, Direct access to the gate of the Power intended for replacement of standard Power MOSFET (analog driving) MOSFETs from DC up to 50 KHz applications. Compatible with standard Power MOSFET Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Table 1. Device summary Order codes Package Tube Tube (lead free) Tape and reel Tape and reel (lead free) TO-252 (DPAK) VND1NV04 VND1NV04-E VND1NV0413TR VND1NV04TR-E SOT-223 VNN1NV04 - VNN1NV0413TR - SO-8 VNS1NV04 - VNS1NV0413TR - September 2013 Doc ID 7381 Rev 4 1/33 www.st.com 1Contents VND1NV04 - VNN1NV04 - VNS1NV04 Contents 1 Block diagram and pin description . 5 2 Electrical specifications 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 7 2.3 Electrical characteristics . 7 2.4 Electrical characteristics curves 12 3 Protection features . 16 4 Package and PCB thermal data . 17 4.1 DPAK thermal data 17 4.2 SOT-223 thermal data . 19 4.3 SO-8 thermal data 22 5 Package and packing information . 25 5.1 DPAK mechanical data . 25 5.2 SOT-223 mechanical data 27 5.3 SO8 mechanical data 27 5.4 DPAK packing information 29 5.5 SOT-223 packing information 30 5.6 SO8 packing information . 31 6 Revision history . 32 2/33 Doc ID 7381 Rev 4