Product Information

STWA65N65DM2AG

Name: STWA65N65DM2AG
Brand: STMicroelectronics
SKU: STWA65N65DM2AG_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STWA65N65DM2AG electronic component of STMicroelectronics

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Datasheet

MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 15.2789 ea
Line Total: USD 15.28

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 23 May to Mon. 27 May MOQ : 1 Multiples : 1 STWA65N65DM2AG STMicroelectronics	1 : USD 10.8848 10 : USD 9.5484

0 - WHS 2 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 1 Multiples : 1 STWA65N65DM2AG STMicroelectronics	1 : USD 15.2789 2 : USD 10.0005 5 : USD 9.4577

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Additional Infomation About Product

STWA65N65DM2AG with MOSFET PTD HIGH VOLTAGE is a power transistor made by STMicroelectronics. It is specifically a N-channel 650V, 80mohm PowerMESH™ MOSFET and it provides high-end performance for very low on-state resistance (RDS(on) min.). The device also features a high avalanche ruggedness and improved bottom-cell scalability for enhanced reliability. It is suitable for switch mode power supply (SMPS) in consumer and industrial applications, particularly in equipment such as air conditioners, washing machines, solar inverters, and battery chargers.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
Id - Continuous Drain Current 60 A 60 A
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Rds On - Drain-Source Resistance 50 mOhms 50 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 3 V 3 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 446 W 446 W
Mounting Style Through Hole Through Hole
Package / Case TO - 247 - 3 TO - 247 - 3
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 10 V 10 V
Qg - Gate Charge 120 nC 120 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Brand Stmicroelectronics Stmicroelectronics
Fall Time 11.5 ns 11.5 ns
Product Type Mosfet Mosfet
Rise Time 13.5 ns 13.5 ns
Factory Pack Quantity : 30 30
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 114 ns 114 ns
Typical Turn-On Delay Time 33 ns 33 ns