Product Information

STTH200W03TV1

STTH200W03TV1 electronic component of STMicroelectronics

Datasheet
Rectifiers Turbo 2 ultrafast 300V 0.95VF 40ns

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STTH200W03TV1
STMicroelectronics

1 : USD 31.379
5 : USD 31.0533
10 : USD 28.9397
25 : USD 27.6507
100 : USD 24.7193
250 : USD 23.5828
500 : USD 23.4006
1000 : USD 21.6111
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Series
Packaging
Product
Brand
Operating Temperature Range
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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STTH200W03TV1 Turbo 2 ultrafast high voltage rectifier Datasheet production data Features Ultrafast switching A1 K1 Low reverse recovery current Low thermal resistance A2 K2 Reduces switching and conduction losses Insulated package Insulating voltage = 2500 V rms A1 Capacitance = 45 pF K1 Complies with UL standards (File ref: E81734) A2 K2 Description ISOTOP The STTH200W03TV1, which uses ST Turbo 2, STTH200W03TV1 300 V technology, is especially suited to be used for DC/AC and DC/AC converters in primary stage of MIG/MMA/TIG welding machine. Packaged in ISOTOP, this device offers high Table 1. Device summary power integration for all welding machines and Symbol Value industrial equipment. I 2 x 100 A F(AV) V 300 V RRM T (max) 150 C j V (typ) 0.95 V F t (typ) 40 ns rr October 2012 Doc ID 023614 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH200W03TV1 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified, per diode) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 300 V RRM I Forward rms current Per diode 145 A F(RMS) I Average forward current, = 0.2 Per diode T = 105 C 200 A F(peak) c I Surge non repetitive forward current t = 10 ms Sinusoidal 800 A FSM p T Storage temperature range -65 to + 150 C stg T Maximum operating junction temperature 150 C j Table 3. Thermal parameters Symbol Parameter Value Unit Per diode 0.7 R Junction to case C/W th(j-c) Total 0.4 R Coupling 0.1 C/W th(c) When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P (diode 1) X R (per diode) + P (diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -100 j (1) I Reverse leakage current V = V A R R RRM T = 125 C - 100 1000 j T = 25 C 1.50 j I = 100 A F T = 150 C - 0.95 1.15 j (2) V Forward voltage drop V F T = 25 C -1.80 j I = 200 A F T = 150 C - 1.22 1.50 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.8 x I + 0.0035 x I F(AV) F (RMS) 2/9 Doc ID 023614 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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