STTH200R04TV Ultrafast recovery diode Main product characteristics A1 K1 I 2 x 100 A F(AV) V 400 V RRM T 150 C j A2 K2 V 0.87 V F (typ) t 40 ns rr (typ) A1 Features and benefits K1 Ultrafast A2 Very low switching losses High frequency and high pulsed current K2 operation ISOTOP Low leakage current STTH200R04TV1 Insulated package: ISOTOP Electrical insulation = 2500 V RMS Order codes Capacitance = 45 pF Part Number Marking Description STTH200R04TV1 STTH200R04TV1 The STTH200R04TV series uses ST s new 400 V planar Pt doping technology. The STTH200R04 is specially suited for switching mode base drive and transistor circuits, such as welding equipment. March 2007 Rev 1 1/7 www.st.com 7Characteristics STTH200R04TV 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 400 V RRM V Non repetitive peak reverse voltage 400 V RSM I RMS forward current Per diode 150 A F(RMS) Per diode T = 80 C 100 A c I Average forward current, = 0.5 F(AV) Per package T = 65 C 200 A c I Repetitive peak forward current t = 5 s, F = 1 kHz square 2000 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 1000 A FSM p T Storage temperature range -65 to + 150 C stg T Maximum operating junction temperature 150 C j Table 2. Thermal parameters Symbol Parameter Value Unit Per diode 0.50 R Junction to case th(j-c) Total 0.30 C/W R Coupling thermal resistance 0.1 th(c) When the diodes are used simultaneously: T = P x R (per diode) + P x R j(diode1) (diode1) th(j-c) (diode2) th(c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 80 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 80 800 j T = 25 C 1.35 j (2) V Forward voltage drop T = 100 C I = 100 A 0.95 1.2 V F j F T = 150 C 0.87 1.1 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.8 x I + 0.003 x I F(AV) F (RMS) 2/7