Product Information

STTH16003TV1

STTH16003TV1 electronic component of STMicroelectronics

Datasheet
Rectifiers 2X80 Amp 300 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 14.21 ea
Line Total: USD 14.21

1 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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STTH16003TV1
STMicroelectronics

1 : USD 20.0154
5 : USD 19.9001
10 : USD 18.9006
30 : USD 18.5226

1 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

STTH16003TV1
STMicroelectronics

1 : USD 14.21

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
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STTH16003 High frequency secondary rectifier Features A1 K1 Combines highest recovery and reverse voltage performance A2 K2 Ultra-fast, soft and noise-free recovery Insulated package: ISOTOP K1 insulated voltage: 2500 V rms capacitance: < 45 pF A1 Low inductance and low capacitance allow simplified layout K2 Description Dual rectifiers suited for switch mode power supply and high frequency DC to DC converters. A2 Packaged in ISOTOP, this device is intended for ISOTOP use in low voltage, high frequency inverters, free STTH16003TV1 wheeling operation, welding equipment and telecom power supplies. Table 1. Device summary I 2 x 60 A F(AV) V 300 V RRM T 150 C j V (typ) 0.95 V F t (typ) 80 ns rr TM: ISOTOP is a registered trademark of STMicroelectronics June 2008 Rev 5 1/7 www.st.com 7Characteristics STTH16003 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, T = 25 C unless otherwise stated) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 300 V RRM I RMS forward current 180 A F(RMS) Per diode 60 I Average forward current Tc = 85C = 0.5 A F(AV) Per device 160 I Surge non repetitive forward current t = 10 ms Sinusoidal 800 A FSM p I Non repetitive peak reverse current t = 100 s square 5 A RSM p T Storage temperature range -55 to + 150 C stg T Maximum operating junction temperature 150 C j Table 3. Thermal parameters Symbol Parameter Maximum Unit Per diode 0.7 R Junction to case th(j-c) Total 0.4 C/W R Coupling 0.1 th(c) When the diodes 1 and 2 are used simultaneously: T = P x R + P x R j (diode1) (diode1) th(j-c) (per diode) (diode2) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 200 A j (1) I Reverse leakage current V = 300 V R R mA T = 125 C 0.2 2 j T = 25 C 1.2 j (2) V Forward voltage drop I = 80 A V F F T = 125 C 0.8 0.95 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p 1. to evaluate the maximum conduction losses use the following equation: 2 P = 0.75 x I + 0.0025 I F(AV) F (RMS) 2/7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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