Product Information

STTH1512W

STTH1512W electronic component of STMicroelectronics

Datasheet
diodes - rectifiers - hyperfast 1.2kv 15a 2.1v @ 15a 105ns do-247 rohs

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

19: USD 1.703 ea
Line Total: USD 32.36

305 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 19  Multiples: 1
Pack Size: 1
Availability Price Quantity
101 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 19
Multiples : 1

Stock Image

STTH1512W
STMicroelectronics

19 : USD 1.703
30 : USD 1.703
100 : USD 1.703
300 : USD 1.703
1000 : USD 1.703

10 - WHS 2


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STTH1512W
STMicroelectronics

1 : USD 4.0387
10 : USD 3.5432
30 : USD 3.249
90 : USD 2.953
510 : USD 2.816
960 : USD 2.7536

     
Manufacturer
Product Category
Package / Case
Vr - Reverse Voltage
If - Forward Current
Recovery Time
Category
Rohs
Brand Category
Voltage - Forward Vf Max @ If
LoadingGif

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STTH1512 1200 V ultrafast recovery diode Features A K Ultrafast, soft recovery K Very low conduction and switching losses High frequency and/or high pulsed current A A operation K K High reverse voltage capability DOP3I DO247 High junction temperature STTH1512PI STTH1512W Insulated package: DOP3I Electrical insulation = 2500 V rms K Capacitance = 12 pF A A A Description A K The high quality design of this diode has 2 D PAK TO-220AC produced a device with low leakage current, STTH1512G STTH1512D regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal Table 1. Device summary for heavy duty applications that demand long term reliability. Symbol Value Such demanding applications include industrial I 15 A F(AV) power supplies, motor control, and similar V 1200 V RRM mission-critical systems that require rectification and freewheeling. These diodes also fit into T 175 C j auxiliary functions such as snubber, bootstrap, V (typ) 1.20 V F and demagnetization applications. t (typ) 53 ns rr The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. April 2010 Doc ID 12157 Rev 2 1/11 www.st.com 11Characteristics STTH1512 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM 2 I Forward rms current TO-220AC / DO247 / DOP3I / DPAK 50 A F(RMS) 2 TO-220AC / D PAK / T = 130 C Average forward current, c DO247 I 15 A F(AV) = 0.5 DOP3I T = 105 C c Repetitive peak forward I t = 5 s, F = 5 kHz square 200 A FRM p current Surge non repetitive I t = 10 ms Sinusoidal 200 A FSM p forward current T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameters Symbol Parameter Value Unit 2 TO-220AC / D PAK / DO247 1.3 C/W R Junction to case th(j-c) DOP3I 2 C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 15 j Reverse leakage (1) I V = V A R R RRM current T = 125 C 10 100 j T = 25 C 2.10 j (2) V Forward voltage drop T = 125 C I = 15 A 1.25 1.90 V F j F T = 150 C 1.20 1.80 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.4 x I + 0.027 I F(AV) F (RMS) 2/11 Doc ID 12157 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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