Product Information

STR1P2UH7

STR1P2UH7 electronic component of STMicroelectronics

Datasheet
MOSFET P-channel 20 V, 0.087 Ohm typ., 1.4 A STripFET H7 Power MOSFET in a SOT-23 package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STR1P2UH7
STMicroelectronics

1 : USD 0.5652
250 : USD 0.4082
500 : USD 0.3454
750 : USD 0.3077
1500 : USD 0.2701
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

STR1P2UH7
STMicroelectronics

1 : USD 1.2822
10 : USD 0.6068
100 : USD 0.3291
500 : USD 0.2586
1000 : USD 0.1998
3000 : USD 0.1817
6000 : USD 0.171
N/A

Obsolete
0 - WHS 3

MOQ : 50
Multiples : 1

Stock Image

STR1P2UH7
STMicroelectronics

50 : USD 0.3416
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
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Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STR1P2UH7 P-channel 20 V, 0.087 typ., 1.4 A STripFET H7 Power MOSFET in a SOT-23 package Datasheet - production data Features Order code V R max I DS DS(on) D STR1P2UH7 20 V 0.1 4.5 1.4 A Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram Description This P-channel Power MOSFET utilizes the D (3) STripFET H7 technology with a trench gate structure combined with extremely low on- resistance. The device also offers ultra-low capacitances for higher switching frequency operations. G (1) S (2) Table 1: Device summary Order code Marking Package Packaging STR1P2UH7 1L2U SOT-23 Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. June 2015 DocID025025 Rev 3 1/12 www.st.com This is information on a product in full production. Contents STR1P2UH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 SOT-23 package mechanical data .................................................... 9 5 Revision history ............................................................................ 11 2/12 DocID025025 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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