X-On Electronics has gained recognition as a prominent supplier of AFT26H160-4S4R3 rf mosfet transistors across the USA, India, Europe, Australia, and various other global locations. AFT26H160-4S4R3 rf mosfet transistors are a product manufactured by NXP. We provide cost-effective solutions for rf mosfet transistors, ensuring timely deliveries around the world.

AFT26H160-4S4R3

AFT26H160-4S4R3 electronic component of NXP
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Part No.AFT26H160-4S4R3
Manufacturer: NXP
Category:RF MOSFET Transistors
Description: RF MOSFET Transistors AF7 2.6GHZ NI880X-4L4S
Datasheet: AFT26H160-4S4R3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Obsolete
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0 - WHS 1

MOQ : 250
Multiples : 250
250 : USD 152.0889
N/A

Obsolete
     
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We proudly offer the AFT26H160-4S4R3 RF MOSFET Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the AFT26H160-4S4R3 RF MOSFET Transistors.

DocumentNumber:AFT26H160--4S4 FreescaleSemiconductor Rev. 1, 11/2013 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET This32WasymmetricalDohertyRFpowerLDMOStransistorisdesignedfor AFT26H160--4S4R3 cellular base station applications covering the frequency range of 2496 to 2690MHz. TypicalDoherty Single--Carrier W--CDMA Performance: V =28Vdc, DD I = 500mA, V =0.6Vdc,P = 32W Avg., Input Signal DQA GSB out PAR = 9.9dB 0.01%Probability onCCDF. G OutputPAR ACPR 2496--2690MHz,32WAVG.,28V ps D Frequency (dB) (%) (dB) (dBc) 2496MHz 14.9 45.7 8.0 --28.9 2570MHz 15.4 45.6 7.9 --30.8 2690MHz 15.1 44.5 7.8 --33.0 Features AdvancedHighPerformanceIn--PackageDoherty Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation Designedfor DigitalPredistortionError CorrectionSystems InTapeandReel. R3Suffix = 250Units, 56mm TapeWidth, 13--inchReel. NI--880XS--4L4S (1) 18 N.C. VBW A Carrier RF /V27 RF /V inA GSA outA DSA RF /V RF /V 36 inB GSB outB DSB Peaking (1) N.C.45 VBW B (TopView) Figure1.PinConnections 1. DevicecannotoperatewiththeV current DD suppliedthroughpin5andpin8. FreescaleSemiconductor, Inc., 2013. All rights reserved. AFT26H160--4S4R3 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperatureRange T --40to+225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.41 C/W JC CaseTemperature74C,32W W--CDMA,28Vdc,I =500mA,V =0.6Vdc,2590MHz DQA GSB Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (4) OnCharacteristics -- SideA (Carrier) GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =80 Adc) DS D GateQuiescentVoltage V 1.5 1.8 2.3 Vdc GS(Q) (V =28Vdc,I =500mAdc,MeasuredinFunctionalTest) DD DA Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =6Vdc,I =0.8Adc) GS D (4) OnCharacteristics -- SideB (Peaking) GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =120 Adc) DS D Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =6Vdc,I =1.2Adc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTF calculator available at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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