Product Information

STPS30100ST

STPS30100ST electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers Pwr SCHOTTKY RECTIFIER

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

11: USD 0.6229 ea
Line Total: USD 6.85

206 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 11  Multiples: 1
Pack Size: 1
Availability Price Quantity
206 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 11
Multiples : 1

Stock Image

STPS30100ST
STMicroelectronics

11 : USD 0.6229
100 : USD 0.6223
500 : USD 0.6214
1000 : USD 0.609

1067 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 72
Multiples : 1

Stock Image

STPS30100ST
STMicroelectronics

72 : USD 1.3164
100 : USD 1.2734
250 : USD 1.2479

     
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Forward Continuous Current
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STPS30100ST Datasheet 100 V power Schottky rectifier Features A K Low V F A Good trade-off between leakage current and forward voltage drop K High frequency operation Avalanche capability specified ECOPACK 2 compliant A K A Applications Switching diode TO-220AB SMPS DC/DC converter LED lighting Desktop power supply Description This single Schottky rectifier is ideal for high frequency switch mode power supply. Housed in a TO-220AB package, the STPS30100ST is optimized for use in notebook and game station adaptors, providing an improved efficiency at both low and high load. Product status link STPS30100ST Product summary Symbol Value I 30 A F(AV) V 100 V RRM T (max.) 150 C j V (typ.) 0.605 V F DS5095 - Rev 2 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS30100ST Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values with terminals 1 and 3 short circuited at T = 25 C, unless amb otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I RMS forward current 60 A F(RMS) I T = 125 C, = 0.5 Average forward current 30 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 300 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 1900 W ARM p j T Storage temperature range -65 to +175 C stg (1) T 150 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit R Junction to case 1 C/W th(j-c) Table 3. Static electrical characteristics (terminals 1 and 3 short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 175 A j V = V R RRM T = 125 C - 20 50 mA j (1) I Reverse leakage current R T = 25 C - 60 A j V = 70 V R T = 125 C - 10 20 mA j T = 25 C - 0.475 j I = 5 A F T = 125 C - 0.385 j T = 25 C - 0.555 j I = 10 A F T = 125 C - 0.475 j (2) V Forward voltage drop V F T = 25 C - 0.620 0.660 j I = 15 A F T = 125 C - 0.525 0.565 j T = 25 C - 0.740 0.800 j I = 30 A F T = 125 C - 0.605 0.655 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.475 x I + 0.006 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier DS5095 - Rev 2 page 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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