Product Information

STP100N8F6

STP100N8F6 electronic component of STMicroelectronics

Datasheet
N-Channel 80 V 100A (Tc) 176W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.854 ea
Line Total: USD 0.85

1274 - Global Stock
Ships to you between
Thu. 23 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1274 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STP100N8F6
STMicroelectronics

1 : USD 0.854
10 : USD 0.7352
30 : USD 0.6767
100 : USD 0.6183
500 : USD 0.5841
1000 : USD 0.5659

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STP100N8F6 N-channel 80 V, 0.008 typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R I P DS DS(on)max. D TOT STP100N8F6 80 V 0.009 100 A 176 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Table 1: Device summary Order code Marking Package Packing STP100N8F6 100N8F6 TO-220 Tube February 2016 DocID026838 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STP100N8F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 type A package information ................................................ 10 4.2 TO-220 type H package information ............................................... 12 5 Revision history ............................................................................ 14 2/15 DocID026838 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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