Product Information

STH145N8F7-2AG

STH145N8F7-2AG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.9013 ea
Line Total: USD 5.9

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

STH145N8F7-2AG
STMicroelectronics

1000 : USD 3.0501
2000 : USD 3.0192
3000 : USD 2.9897
4000 : USD 2.9602
5000 : USD 2.9307
6000 : USD 2.9011
10000 : USD 2.8716
20000 : USD 2.8435
50000 : USD 2.814

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

STH145N8F7-2AG
STMicroelectronics

1000 : USD 2.592
2000 : USD 2.4

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

STH145N8F7-2AG
STMicroelectronics

1000 : USD 2.1845

0 - WHS 4


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STH145N8F7-2AG
STMicroelectronics

1 : USD 5.9013
10 : USD 2.0013
100 : USD 1.56
500 : USD 1.3239
1000 : USD 1.1084
5000 : USD 1.0243
10000 : USD 0.9842
25000 : USD 0.9606

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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STH145N8F7-2AG Automotive-grade N-channel 80 V, 3.3 m typ., 90 A STripFET F7 Power MOSFET in a HPAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH145N8F7-2AG 80 V 4 m 90 A 200 W Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Figure 1: Internal schematic diagram Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STH145N8F7-2AG 145N8F7 HPAK-2 Tape and reel June 2015 DocID027933 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STH145N8F7-2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 HPAK-2 package information ......................................................... 10 5 Packing information ...................................................................... 13 6 Revision history ............................................................................ 15 2/16 DocID027933 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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