Product Information

STGW35NB60SD

STGW35NB60SD electronic component of STMicroelectronics

Datasheet
Transistor: IGBT; 600V; 35A; 200W; TO247-3
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

30: USD 3.8064 ea
Line Total: USD 114.19

582 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 30  Multiples: 30
Pack Size: 30

 More Buying Options & Price Grid(s)

Availability Price Quantity
582 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 30
Multiples : 30

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STGW35NB60SD
STMicroelectronics

30 : USD 3.8198

Read More Specifications

     
Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Pulsed Collector Current
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
Gate Charge
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Additional Infomation About Product

STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH IGBT General features V I CE(sat) C Type V CES (Max) 25C 100C STGW35NB60SD 600V < 1.7V 35A LOW ON-VOLTAGE DROP (V ) CEsat 3 2 LOW INPUT CAPACITANCE 1 HIGH CURRENT CAPABILITY TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has Internal schematic diagram designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. Applications LIGHT DIMMER HID WELDING MOTOR CONTROL STATIC RELAYS Order codes Sales Type Marking Package Packaging STGW35NB60SD GW35NB60SD TO-247 TUBE Rev 1 November 2005 1/13 www.st.com 131 Electrical ratings STGW35NB60SD 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 600 V CES GS I Note 4 Collector Current (continuous) at 25C 70 A C I Note 4 Collector Current (continuous) at 100C 35 A C I Note 1 Collector Current (pulsed) 250 A CM V Gate-Emitter Voltage 20 V GE I Diode RMS Forward Current at T = 25C 30 A f C P Total Dissipation at T = 25C 200 W TOT C T Operating Junction Temperature j 55 to 150 C T Storage Temperature stg Maximum Lead Temperature for Soldering T 300 C L Purpose (1.6mm from case, for 10sec.) Table 2. Thermal resistance Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case (IGBT) -- -- 0.625 C/W Rthj-case Thermal Resistance Junction-case (DIODE) -- -- 1.5 C/W Rthj-amb Thermal Resistance Junction-ambient -- -- 50 C/W 2/13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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