Product Information

STFW1N105K3

STFW1N105K3 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 1050V 8 Ohm 1.4 A SuperMESH3(TM)

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

90: USD 1.4305 ea
Line Total: USD 128.74

0 - Global Stock
MOQ: 90  Multiples: 30
Pack Size: 30
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STFW1N105K3
STMicroelectronics

1 : USD 8.448
10 : USD 7.3239
100 : USD 5.9999
500 : USD 5.1076
1000 : USD 5.0797

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STFW1N105K3
STMicroelectronics

1 : USD 9.4561
10 : USD 3.4406
25 : USD 3.3017

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 90
Multiples : 30

Stock Image

STFW1N105K3
STMicroelectronics

90 : USD 1.4305
180 : USD 1.281
360 : USD 1.2262
540 : USD 1.1758

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet production data Features TAB R DS(on) Order codes V I P 111 DS D TOT max 3 2 3 STF1N105K3 1 2 20 W 1 STFW1N105K3 1050 V 11 1.4 A TO-220FP TO-3PF STP1N105K3 60 W Gate charge minimized Extremely large avalanche performance 3 2 100% avalanche tested 1 Very low intrinsic capacitance TO-220 Applications Figure 1. Internal schematic diagram Switching applications Description These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. * These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. 6 0 Y Table 1. Device summary Order codes Marking Package Packaging STF1N105K3 TO-220FP STFW1N105K3 1N105K3 TO-3PF Tube STP1N105K3 TO-220 January 2013 Doc ID 023509 Rev 2 1/18 This is information on a product in full production. www.st.com 18Contents STF1N105K3, STFW1N105K3, STP1N105K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 17 2/18 Doc ID 023509 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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