Product Information

STB9NK80Z

Name: STB9NK80Z
Brand: STMicroelectronics
SKU: STB9NK80Z_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STB9NK80Z electronic component of STMicroelectronics

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Datasheet

STMicroelectronics MOSFET N-CH 800V 1.5Ohm typ 5.2A Zener-protected

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 0.8021 ea
Line Total: USD 802.1

0 - Global Stock

MOQ: 1000 Multiples: 1000
Pack Size: 1000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 1000 Multiples : 1000 STB9NK80Z STMicroelectronics	1000 : USD 1.8584 2000 : USD 1.8398 3000 : USD 1.8213 4000 : USD 1.8031 5000 : USD 1.7852 6000 : USD 1.7672 10000 : USD 1.7495 20000 : USD 1.7321 50000 : USD 1.7149

0 - WHS 2 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 1000 Multiples : 1000 STB9NK80Z STMicroelectronics	1000 : USD 2.4956

0 - WHS 3 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 1 Multiples : 1 STB9NK80Z STMicroelectronics	1 : USD 5.0749 10 : USD 4.3965 100 : USD 3.5349 500 : USD 2.9042

0 - WHS 4 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 1 Multiples : 1 STB9NK80Z STMicroelectronics	1 : USD 5.0749 10 : USD 4.3965 100 : USD 3.5349 500 : USD 2.9042

0 - WHS 5 Ships to you between Mon. 27 May to Wed. 29 May MOQ : 1 Multiples : 1 STB9NK80Z STMicroelectronics	1 : USD 6.156 10 : USD 2.2248 25 : USD 2.0952 100 : USD 1.7928 500 : USD 1.4688 1000 : USD 1.2096

0 - WHS 6 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 1000 Multiples : 1000 STB9NK80Z STMicroelectronics	1000 : USD 0.8021

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Additional Infomation About Product

STB9NK80Z Datasheet Automotive-grade N-channel 800 V, 1.5 typ., 5.2 A SuperMESH Power MOSFET in a DPAK package Features TAB V R max. I Order code DS DS(on) D STB9NK80Z 800 V 1.8 5.2 A 2 3 1 AEC-Q101 qualified 100% avalanche tested DPAK Gate charge minimized Very low intrinsic capacitance D(2, TAB) Zener-protected Applications G(1) Switching applications Description S(3) AM01475V1 This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well- established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STB9NK80Z Product summary Order code STB9NK80Z Marking B9NK80Z Package DPAK Packing Tape and reel DS9606 - Rev 3 - October 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB9NK80Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 800 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 5.2 A D C I Drain current (continuous) at T = 100 C 3.3 A D C (1) I Drain current (pulsed) 20.8 A DM P Total power dissipation at T = 25 C 125 W TOT C ESD Gate-source human body model (C = 100 pF, R = 1.5 k) 4 kV (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 5.2 A, di/dt 200 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1 thj-case C/W R Thermal resistance junction-ambient 62.5 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 5.2 A AR (2) E Single pulse avalanche energy 210 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS9606 - Rev 3 page 2/17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 5.2 A 5.2 A
Vds - Drain-Source Breakdown Voltage 800 V 800 V
Rds On - Drain-Source Resistance 1.5 Ohms 1.5 Ohms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 3.75 V 3.75 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 125 W 125 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 252 - 3 TO - 252 - 3
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 30 V 30 V
Qg - Gate Charge 40 nC 40 nC
Qualification Aec - Q101 Aec - Q101
Tradename Supermesh Supermesh
Configuration Single Single
Series N - Channel Mdmesh N - Channel Mdmesh
Transistor Type 1 N - Channel 1 N - Channel
Brand Stmicroelectronics Stmicroelectronics
Fall Time 22 ns 22 ns
Rise Time 12 ns 12 ns
Factory Pack Quantity : 1000 1000
Typical Turn-Off Delay Time 45 ns 45 ns
Typical Turn-On Delay Time 20 ns 20 ns
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000