Product Information

STB8N90K5

Name: STB8N90K5
Brand: STMicroelectronics
SKU: STB8N90K5_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STB8N90K5 electronic component of STMicroelectronics

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Datasheet

MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 6.9386 ea
Line Total: USD 6.94

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 1 Multiples : 1 STB8N90K5 STMicroelectronics	1 : USD 3.4056

0 - WHS 2 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 1 Multiples : 1 STB8N90K5 STMicroelectronics	1 : USD 3.9895 30 : USD 3.287 300 : USD 2.6905

0 - WHS 3 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 1000 Multiples : 1000 STB8N90K5 STMicroelectronics	1000 : USD 2.2199

0 - WHS 4 Ships to you between Mon. 27 May to Wed. 29 May MOQ : 1 Multiples : 1 STB8N90K5 STMicroelectronics	1 : USD 6.9386 10 : USD 2.5269 25 : USD 2.4234 100 : USD 2.1334 500 : USD 1.833 1000 : USD 1.6466

0 - WHS 5 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 11 Multiples : 1 STB8N90K5 STMicroelectronics	11 : USD 2.5071

0 - WHS 6 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 5 Multiples : 1 STB8N90K5 STMicroelectronics	5 : USD 3.4056

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Additional Infomation About Product

STB8N90K5 N-channel 900 V, 0.60 typ., 8 A MDmesh K5 2 Power MOSFET in a D PAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STB8N90K5 900 V 0.68 8 A 2 Industrys lowest R x area DS(on) 3 Industrys best FoM (figure of merit) 1 Ultra-low gate charge 100% avalanche tested D PAK Zener-protected Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing 2 STB8N90K5 8N90K5 D PAK Tape and reel November 2016 DocID030104 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STB8N90K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-263) type A package information ................................... 9 4.2 DPAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID030104 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 8 A 8 A
Vds - Drain-Source Breakdown Voltage 900 V 900 V
Rds On - Drain-Source Resistance 600 mOhms 600 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 3 V 3 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 130 W 130 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 263 - 3 TO - 263 - 3
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 30 V 30 V
Qg - Gate Charge 11 nC 11 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Mdmesh K5 Mdmesh K5
Transistor Type 1 N - Channel 1 N - Channel
Brand Stmicroelectronics Stmicroelectronics
Fall Time 13.5 ns 13.5 ns
Rise Time 13.2 ns 13.2 ns
Factory Pack Quantity : 1000 1000
Typical Turn-Off Delay Time 36.4 ns 36.4 ns
Typical Turn-On Delay Time 14.7 ns 14.7 ns