Product Information

SPV1001D40TR

SPV1001D40TR electronic component of STMicroelectronics

Datasheet
Diode Schottky 40V 16A 3-Pin(2+Tab) D2PAK T/R

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

15: USD 4.2033 ea
Line Total: USD 63.05

0 - Global Stock
MOQ: 15  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 15
Multiples : 1

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SPV1001D40TR
STMicroelectronics

15 : USD 4.2033
25 : USD 3.785
50 : USD 3.6446
100 : USD 3.392

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Vf - Forward Voltage
Ir - Reverse Current
Series
Packaging
Brand
Packagingoptionsscrubbed
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SPV1001 Cool bypass switch for photovoltaic applications Features K I = 16 A, V = 40 V F R K Very low forward voltage drop A Very low reverse leakage current A A K A 175 C operating junction temperature 2 TO220 D PAK Applications Photovoltaic panels Description The SPV1001 is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. Table 1. Device summary Order codes Package Packaging SPV1001D40 Tube 2 D PACK SPV1001D40TR Tape and reel SPV1001T40 TO220 Tube November 2011 Doc ID 18076 Rev 3 1/12 www.st.com 12Maximum ratings SPV1001 1 Maximum ratings 1.1 Absolute maximum ratings Table 2. Absolute maximum ratings Range Symbol Parameter Unit min, max V Max DC reverse voltage 40 V R I Max. forward current 16 A F Non repetitive peak surge (half-wave, single-phase, I 250 A FSM 60 Hz) ESD level Human body level 8 k V 1.2 Thermal data Table 3. Thermal data Symbol Parameter Value Unit 2 R Thermal resistance, junction-to-ambient (D PAK, TO220) 1.5 C/W thJC T Junction temperature operating range -40 to 175 C J T Storage temperature range -40 to 175 C STG 2/12 Doc ID 18076 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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