Product Information

SPV1001N30

SPV1001N30 electronic component of STMicroelectronics

Datasheet
Diodes - General Purpose, Power, Switching Cool bypass switch for photovoltaic app

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000

Stock Image

SPV1001N30
STMicroelectronics

3000 : USD 2.3037
N/A

Obsolete
0 - WHS 2

MOQ : 3
Multiples : 1

Stock Image

SPV1001N30
STMicroelectronics

3 : USD 5.9372
10 : USD 5.3529
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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SPV1001N Cool bypass switch for photovoltaic applications Features Anodo SPV1001N30 I =12.5 A, V =30 V F R SPV1001N40 I =12.5 A, V =40 V F R Very low forward voltage drop Very low reverse leakage current Catodo 150 C operating junction temperature PQFN 5 x 6 mm Applications Photovoltaic panels Description The SPV1001N is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. Table 1. Device summary Order codes Package Packaging SPV1001N30 PQFN 5 x 6 mm Tape and reel SPV1001N40 November 2011 Doc ID 018938 Rev 2 1/9 www.st.com 9Maximum ratings SPV1001N 1 Maximum ratings 1.1 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit SPV1001N30 SPV1001N40 V Max DC reverse voltage 30 40 V R I Max forward current 12.5 12.5 A F Non repetitive peak surge (half-wave, single I 250 250 A FSM phase 50-60 Hz) ESD level Human body level 8 k 8 k V 1.2 Thermal data Table 3. Thermal data Symbol Parameter Value Unit T Junction temperature operating range -40 to 150 -40 to 150 C J T Storage temperature range -40 to 150 -40 to 150 C STG R Thermal resistance, junction-to-case 4 4 C/W thJC 2/9 Doc ID 018938 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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