Product Information

ITA25B3

ITA25B3 electronic component of STMicroelectronics

Datasheet
TVS Diode Arrays 25V 300W Bidirect

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

ITA25B3
STMicroelectronics

1 : USD 4.0986
10 : USD 3.6816
100 : USD 3.0162
500 : USD 2.5676
1000 : USD 2.1655
N/A

Obsolete
0 - WHS 2

MOQ : 40
Multiples : 40

Stock Image

ITA25B3
STMicroelectronics

40 : USD 2.7406
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Polarity
Termination Style
Breakdown Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Tradename
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ITAxxB3 Bidirectional Transil, transient voltage surge suppressor (TVS) array for data line protection Datasheet production data Features High surge capability Transil array: I = 40 A (8/20 s) PP Peak pulse power: 300 W (8/20 s) Separated input - output SO-20 Up to 9 bidirectional Transil functions Low clamping factor (V /V ) at high current CL BR Description level Transil diode arrays provide high overvoltage Low leakage current protection by clamping action. Their ESD protection up to 15 kV instantaneous response to transient overvoltages makes them particularly suited to protect voltage Complies with the following standards sensitive devices such as MOS technology and low voltage supplied ICs. IEC 61000-4-2 level 4 15 kV (air discharge) The ITA series combines high surge capability 8 kV (contact discharge) against energetic pulses with high voltage performance against ESD. MIL STD 883G- Method 3015-7: class 3B 25 kV (human body model) The separated input/output configuration of the device ensures improved protection against very fast transient overvoltage like ESD by elimination Applications of the spikes induced by parasitic inductances created by external wiring. Differential data transmission lines protection, such as: Figure 1. Functional diagram RS-232 RS-423 GND GND 1 20 RS-422 2 19 INPUT OUTPUT RS-485 INPUT 3 18 OUTPUT INPUT 4 17 OUTPUT 5 16 INPUT OUTPUT INPUT 6 15 OUTPUT INPUT 14 OUTPUT 7 13 INPUT 8 OUTPUT INPUT 9 12 OUTPUT GND 10 11 GND TM: Transil is a trademark of STMicroelectronics October 2012 Doc ID 11085 Rev 3 1/8 This is information on a product in full production. www.st.com 8Characteristics ITAxxB3 1 Characteristics Table 1. Absolute ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power (8/20 s) T initial = T 300 W PP j amb (1) I Peak pulse current (8/20 s) T initial = T 40 A PP j amb 2 2 (1) 2 I tWire I t value 0.6 A s T Maximum operating junction temperature 125 C j T Storage temperature range -55 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by the wire melting. Table 2. Electrical characteristics (definitions, T = 25 C) amb Symbol Parameter I IPP V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL IRM V I Leakage current RM VRM VCL VBR I Peak pulse current PP T Voltage temperature coefficient V Forward voltage drop F C Capacitance Table 3. Electrical characteristics (values, T = 25 C) amb (1) (1) (1) (2) V I I V V I V I TC BR R RM RM CL PP CL PP Order code min. max. max. 8/20 s max. 8/20 s max. max. -4 VmA A V V A V A 10 /C pF ITA6V5B3 6.5 1 10 5 9.5 10 12.1 25 4 1100 ITA18B3 18 1 4 15 2110 2625 9 500 ITA25B3 25 1 4 24 3110 3625 12 420 1. Between I/O pin and ground. 2. Between two input pins at 0 V Bias, F = 1 MHz. 2/8 Doc ID 11085 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
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ST MICROELECTRONICS
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