Product Information

SRDA3.3-4DR2G

SRDA3.3-4DR2G electronic component of ON Semiconductor

Datasheet
ON Semiconductor TVS Diode Arrays Low Cap TVS

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.111 ea
Line Total: USD 1.11

442 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
337 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

SRDA3.3-4DR2G
ON Semiconductor

1 : USD 1.0421
10 : USD 0.8736
30 : USD 0.7812
100 : USD 0.6768
500 : USD 0.6291
1000 : USD 0.6083

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Type
Width
Brand
Mounting Style
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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SRDA3.3-4 ESD Protection Diode Low Capacitance Surface Mount ESD Protection for HighSpeed Data Interfaces www.onsemi.com The SRDA3.34 surge protection is designed to protect equipment attached to high speed communication lines from ESD and lightning. SO8 LOW CAPACITANCE Features VOLTAGE SUPPRESSOR Protects 4 I/O Lines 500 WATTS PEAK POWER Low Working Voltage: 3.3 V 3.3 VOLTS Low Clamping Voltage Low Capacitance (<15 pF) for High Speed Interfaces PIN CONFIGURATION Peak Power 500 W 8x20 s AND SCHEMATIC Transient Protection for High Speed Lines to: IEC6100042 (ESD) 15 kV (air), 8 kV (contact) I/O 1 1 8 GND IEC6100044 (EFT) 40 A REF 1 2 7 I/O 4 IEC6100045 (Lightning) 25 A REF 1 3 6 I/O 3 UL Flammability Rating of 94 V0 I/O 2 4 5 GND This is a PbFree Device Typical Applications High Speed Communication Line Protection SOIC8 8 T1/E1 Secondary Protection CASE 751 1 PLASTIC T3/E3 Secondary Protection Analog Video Protection Base Stations MARKING DIAGRAM 2 I C Bus Protection 8 P4106 MAXIMUM RATINGS AYWW Rating Symbol Value Unit Peak Power Dissipation P 500 W 1 pk 8 x 20 S T = 25C (Note 1) A Junction and Storage Temperature Range T , T 55 to +150 C A = Assembly Location J stg Y = Year Lead Solder Temperature T 260 C L WW = Work Week Maximum 10 Seconds Duration = PbFree Package IEC 6100042 Contact ESD 8 kV Air 15 (Note: Microdot may be in either location) IEC 6100044 (5/50 ns) EFT 40 A ORDERING INFORMATION 25 A IEC 6100045 (8 x 20 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be SRDA3.34DR2G SO8 2500/Tape & Reel assumed, damage may occur and reliability may be affected. (PbFree) 1. Nonrepetitive current pulse 8 x 20 S exponential decay waveform For information on tape and reel specifications, Pin 2/3 to Pin 5/8 including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: October, 2017 Rev. 1 SRDA3.34/DSRDA3.34 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Reverse Stand Off Voltage V 3.3 V RWM Reverse Breakdown Voltage I = 1.0 mA V 5.0 V t BR Reverse Leakage Current V = 3.3 V I N/A 2.8 5.0 A RWN R Maximum Clamping Voltage I = 1.0 A, 8 x 20 S V N/A 5.9 7.0 V PP C Maximum Clamping Voltage I = 10 A, 8 x 20 S V N/A 7.1 10 V PP C Maximum Clamping Voltage I = 25 A, 8 x 20 S V N/A 9.0 15 V PP C Between I/O Pins and Ground V = 0 V, 1.0 MHz C 8.0 15 pF R J Between I/O Pins V = 0 Volts, 1.0 MHz C 4.0 pF R J ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F UniDirectional P Peak Power Dissipation pk C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. TYPICAL CHARACTERISTICS 14 100 t PEAK VALUE I 8 s r RSM 90 12 PULSE WIDTH (t ) IS DEFINED P 80 AS THAT POINT WHERE THE 10 70 PEAK CURRENT DECAY = 8 s 60 8 HALF VALUE I /2 20 s RSM 50 6 40 30 4 t P 20 2 10 0 0 020 40 60 80 05 10 15 20 25 t, TIME ( s) PEAK PULSE CURRENT (A) Figure 1. 8 x 20 s Pulse Waveform Figure 2. Clamping Voltage vs. Peak Pulse Current (8 x 20 s Waveform) www.onsemi.com 2 % OF PEAK PULSE CURRENT CLAMPING VOLTAGE (V)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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