Product Information

FERD30S50DJF-TR

FERD30S50DJF-TR electronic component of STMicroelectronics

Datasheet
Rectifiers Field Effect Rectifier

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000

Stock Image

FERD30S50DJF-TR
STMicroelectronics

3000 : USD 1.6167
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

FERD30S50DJF-TR
STMicroelectronics

1 : USD 2.377
10 : USD 2.0166
100 : USD 1.6147
250 : USD 1.5315
500 : USD 1.4068
1000 : USD 1.2474
3000 : USD 1.2474
6000 : USD 1.2024
9000 : USD 1.18
N/A

Obsolete
0 - WHS 3

MOQ : 30
Multiples : 1

Stock Image

FERD30S50DJF-TR
STMicroelectronics

30 : USD 2.4256
100 : USD 1.4437
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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FERD30S50 Field effect rectifier Datasheet production data Features A A CMOS proprietary process Stable leakage current over reverse voltage K Low forward voltage drop A High frequency operation A Description K K This single rectifier is based on a proprietary technology, enabling to achieve the best in class V /I trade-off for a given silicon surface. F R Packaged in PowerFLAT 5x6, this device is intended to be used in rectification and freewheeling operations in switch-mode power A A supplies. PowerFLAT 5x6 FERD30S50DJF Table 1. Device summary Symbol Value I 30 A F(AV) V 50 V RRM T +150 C j (max) V (typ) 0.33 V F TM: PowerFLAT is a trademark of STMicroelectronics November 2013 Doc ID024715 Rev 2 1/8 This is information on a product in full production. www.st.com Obsolete Product(s) - Obsolete Product(s)Characteristics FERD30S50 1 Characteristics Table 2. Absolute ratings (limiting values, at 25 C, unless otherwise specified, anode terminals short-circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 50 V RRM I Forward rms current 45 A F(RMS) I Average forward current, = 0.5 T = 95 C 30 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 180 A FSM p T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 150 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value (max) Unit R Junction to case 2.6 C/W th(j-c) Table 4. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 125 C V = 35 V 25 j R (1) I Reverse leakage current T = 25 C 0.8 mA R j V = V R RRM T = 125 C 30 60 j T = 25 C 0.32 j I = 5 A F T = 125 C 0.25 j T = 25 C 0.37 j (2) V Forward voltage drop I = 10 A V F F T = 125 C 0.33 j T = 25 C 0.415 0.47 j I = 15 A F T = 125 C 0.39 0.45 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.205 x I + 0.017 I F(AV) F (RMS) 2/8 Doc ID024715 Rev 2 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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