Product Information

ESDZV5-1BF4

ESDZV5-1BF4 electronic component of STMicroelectronics

Datasheet
ESD Suppressors / TVS Diodes Ultra Low clamping single line bidirectional ESD protection

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

663: USD 0.0189 ea
Line Total: USD 12.53

72868 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 663  Multiples: 1
Pack Size: 1
Availability Price Quantity
72868 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 650
Multiples : 1

Stock Image

ESDZV5-1BF4
STMicroelectronics

650 : USD 0.0219
1000 : USD 0.0147
2500 : USD 0.0145

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
LoadingGif

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ESDZV5-1BF4 Datasheet Ultra low clamping single line bidirectional ESD protection Features Ultra low clamping voltage: 7 V (IEC 61000-4-2 contact discharge 8 kV at 30 ns / 16 A TLP) Bidirectional device Low leakage current 0201 package ECOPACK2 compliant component Exceeds the followig standard: IEC 61000-4-2 level 4 = 30 kV (air discharge) and 18 kV (contact discharge) 0201 package Application Where transient over voltage protection in ESD sensitive equipment is required, such Figure 1. Functional diagram as: Smartphones, mobile phones and accessories Tablets and notebooks Portable multimedia devices and accessories Wearable, home automation, healthcare Highly integrated systems Description The ESDZV5-1BF4 is a bidirectional single line TVS diode designed to protect the data line or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. Product status ESDZV5-1BF4 DS11928 - Rev 3 - January 2022 www.st.com For further information contact your local STMicroelectronics sales office.ESDZV5-1BF4 Characteristics 1 Characteristics Table 1. Absolute ratings (T = 25 C) amb Symbol Parameter Value Unit Contact discharge 18 V Peak pulse voltage kV PP Air discharge 30 P Peak pulse power dissipation (8/20 s) 70 W PP I Peak pulse current (8/20 s) 7 A PP T Operating junction temperature range -55 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L Figure 2. Electrical characteristics (definitions) I Parameter Symbol R D V = Trigger voltage Trig V Clamping voltage CL = V RM V V I Leakage current V Trig V V = CL H RM RM I V RM = Stand-off voltage RM = Peak pulse current I PP R Dynamic resistance = D V = Holding voltage H I PP C Input capacitance per line = LINE Table 2. Electrical characteristics (T = 25 C) amb Symbol Test condition Min. Typ. Max. Unit V Higher voltage than V guarantees the protection turn-on 5.8 10 V Trig Trig V Lower voltage than V guarantees the protection turn-off 4 4.6 H H (1) I V = 5.5 V 100 nA RM RM V 8 kV contact discharge after 30 ns, IEC 61000-4-2 7 V CL V 8/20 s waveform, I = 7 A 10 V CL PP C F = 1 MHz, V = 0 V, V = 30 mV 6 7.5 pF LINE LINE OSC R Pulse duration 100 ns 0.18 D 1. Application note: when used to protect a line connected to a DC source, the DC voltage must be lower than the minimum V H to enable the diode to return to its non-conducting state after the transient. DS11928 - Rev 3 page 2/10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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