EMIF06-USD05F3 6-line EMI filter and ESD protection for SD card, mini-SD card and micro-SD card interfaces Description The EMIF06-USD05F3 is a 6-line EMI filter dedicated to SD, mini-SD and micro-SD card applications. It provides an efficient attenuation at 900 MHz to reduce or suppress the antenna de- sense. This filter includes ESD protection circuitry, which prevents damage to the protected device when inserting the card. Pull-up resistors Flip Chip are not integrated inside the chip, hence the (15 bumps) EMIF06-USD05F3 gives the flexibility to customers to use controllers with embedded Datasheet production data resistance. This 6-line IPAD is packaged into a flip-chip solution, saving PCB space. Features Figure 1. Pin configuration (bump side) EMI low-pass filter 4 3 2 1 104 MHz clock frequency compatible with SDR50 mode (SD3.0) A High attenuation level of -30 dB at 900 MHz B Lead-free package C Complies with the following standards: D IEC 61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) Applications Where EMI filtering in ESD sensitive equipment is required: Features phones, smartphones, phablets and communication systems Tablets, multimedia players like MP3, camcorders TM: IPAD is a trademark of STMicroelectronics April 2014 DocID025910 Rev 1 1/8 This is information on a product in full production. www.st.com Obsolete Product(s) - Obsolete Product(s)Characteristics EMIF06-USD05F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD discharge IEC 61000-4-2, level 4 15 Air discharge card side V Contact discharge card side 8 kV PP Air discharge IC side 2 Contact discharge IC side 2 T Maximum junction temperature 125 C j T Operating temperature range - 30 to + 85 C op T Storage temperature range - 55 to + 150 C stg Figure 2. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR V = Stand-off voltage RM V V V CL BR RM I = Leakage current at V RM RM V I RM Line capacitance C = line I PP Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Parameter Test conditions Min. Typ. Max. Unit V Breakdown voltage I = 1 mA 6 V BR R I Leakage current at V V = 3 V 100 nA RM RM RM R Serial line resistor 32 40 48 line C Total line capacitance V = 2.4 V 11 14 pF line BIAS F -3dB cut-off frequency Z = Z = 50 300 MHz c source load S Attenuation F = 900 MHz -25 -30 dB 21 2/8 DocID025910 Rev 1 Obsolete Product(s) - Obsolete Product(s)